UNISONIC TECHNOLOGIES CO., LTD
10N60Z
10A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The
UTC 10N60Z
is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* R
DS(ON)
= 0.75Ω@V
GS
=10V
* Low gate charge ( typical 44nC)
* Low C
RSS
( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Lead Free
Halogen Free
10N60ZL-TF1-T
10N60ZG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
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1 of 7
QW-R502-936,A
10N60Z
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
± 20
V
Avalanche Current (Note 2)
I
AR
10
A
10
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
38
A
530
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
50
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25
Ω
Starting T
J
= 25°C
4. I
SD
≤
9.5A, di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATING
62.5
2.5
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
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QW-R502-936,A
10N60Z
ELECTRICAL CHARACTERISTICS
( T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250μA
Drain-Source Leakage Current
I
DSS
V
DS
=600V, V
GS
=0V
Forward
V
GS
=20 V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20 V, V
DS
=0V
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
I
D
=250µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1.0 MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DS
=300V, I
D
=10A,
R
G
=25Ω (Note1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, I
D
=10A,
Gate-Source Charge
Q
GS
V
GS
=10 V (Note1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0 V, I
S
=10A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
=0 V, I
S
=10A,
dI
F
/dt=100A/µs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test : Pulse width
≤300µs,
Duty cycle
≤2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
600
1
5
-5
0.7
2.0
4.0
0.68 0.75
V
µA
µA
µA
V/°C
V
Ω
1570 2040 pF
166 215 pF
18
24
pF
23
55
69 150
144 300
77 165
44
57
6.7
18.5
1.4
10
38
420
4.2
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
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3 of 8
QW-R502-936,A
10N60Z
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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QW-R502-936,A
10N60Z
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-936,A
Microcontroller MCU
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