BYV32-200 datasheet, PDF - EEWORLD Datasheet

BYV32-200: Description18 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB; CategoryDiscrete semiconductor diode; File Size157KB，5 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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18 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB

Parameter Name	Attribute value
Maker	Vishay
Reach Compliance Code	unknown
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.15 V
Maximum non-repetitive peak forward current	150 A
Maximum operating temperature	150 °C
Maximum output current	18 A
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.025 µs
surface mount	NO

	BYV32-200	BYV32-100	BYV32-150	BYV32-50	BYV32_08
Description	18 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB	18 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB	18 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB	10 A, 50 V, SILICON, RECTIFIER DIODE	18 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
Maker	Vishay	Vishay	Vishay	Vishay	-
Reach Compliance Code	unknown	unknow	unknow	unknow	-
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-
Maximum forward voltage (VF)	1.15 V	1.15 V	1.15 V	1.15 V	-
Maximum non-repetitive peak forward current	150 A	150 A	150 A	150 A	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	-
Maximum output current	18 A	18 A	18 A	18 A	-
Maximum repetitive peak reverse voltage	200 V	100 V	150 V	50 V	-
Maximum reverse recovery time	0.025 µs	0.025 µs	0.025 µs	0.025 µs	-
surface mount	NO	NO	NO	NO	-

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