INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUV89
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 800V(Min)
·High
Switching Speed
APPLICATIONS
·Designed
for use in AC motor control systems from three-
phase mains.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector- Emitter Voltage V
BE
=0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1200
800
5
8
15
4
6
125
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BUV89
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.1A ;I
B
= 0; L=25 mH
B
800
V
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)
I
CES
Collector-Emitter Saturation Voltage
I
C
= 4.5A; I
B
= 2A
1.0
V
Collector-Emitter Saturation Voltage
I
C
= 6A; I
B
= 3A
B
1.0
V
Base-Emitter Saturation Voltage
I
C
= 4.5A; I
B
= 2A
V
CE
= V
CESmax
;V
BE
= 0
V
CE
= V
CESmax
;V
BE
= 0; T
J
= 125℃
V
EB
= 5V; I
C
=0
1.3
1
2
10
V
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
mA
h
FE
DC Current Gain
I
C
= 1A; V
CE
= 5V
8
C
OB
Output Capacitance
I
E
= 0; V
CB
= 10V;f
test
= 1MHz
I
C
= 0.1A ; V
CE
= 5V;f
test
= 5MHz
125
pF
f
T
Current-Gain—Bandwidth Product
7
MHz
Switching Times; Resistive Load
μs
μs
μs
t
on
t
s
t
f
Turn-On Time
0.2
Storage Time
I
C
= 4.5A; I
B1
= -I
B2
= 2A
3.5
Fall Time
0.5
isc Website：www.iscsemi.cn
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