High Voltage
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXTJ6N150
V
DSS
I
D25
=
=
R
DS(on)
≤
1500V
3A
3.85
Ω
ISO TO-247
TM
E153432
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
V
ISOL
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque
50/60 Hz, RM, t = 1min
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
1500
1500
±30
±40
3
24
3
500
5
125
- 55 ... +150
150
- 55 ... +150
300
260
1.13 / 10
2500
5
V
V
V
V
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in
V~
g
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
±30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 3A, Note 1
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
1500
3.0
5.0
V
V
Applications
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Fast Intrinsic Diode
Avalanche Rated
Molding Epoxies meet UL 94 V-0
Flammability Classification
G
D
S
D
Isolated Tab
G = Gate
S = Source
= Drain
±100
nA
25
μA
250
μA
3.85
Ω
© 2013 IXYS CORPORATION, All Rights Reserved
DS100448A(6/13)
IXTJ6N150
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 3A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 3A
R
G
= 3Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 3A, Note 1
Characteristic Values
Min.
Typ.
Max.
4.0
6.5
2230
170
64
22
20
50
38
67
12
36
0.30
mS
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.0
°C/W
°C/W
PINS:
1 = Gate
2 = Drain
3 = Source
4 = Isolated
ISO TO-247 (IXTJ) OUTLINE
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 6A, V
GS
= 0V, Note 1
I
F
= 3A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
1.5
12.0
9.0
Characteristic Values
Min.
Typ.
Max.
6
24
1.3
A
A
V
μs
A
μC
Note:
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTJ6N150
Fig. 1. Output Characteristics @ T
J
= 25ºC
6
V
GS
= 10V
5
7V
4
7
10
V
GS
= 10V
9
8
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
I
D
- Amperes
6
5
4
3
2
6V
3
6V
2
1
5V
0
0
2
4
6
8
10
12
14
16
18
1
0
0
5
10
15
20
25
5V
30
35
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
6
V
GS
= 10V
7V
5
3.4
3.0
2.6
2.2
1.8
1.4
1.0
1
5V
0.6
0.2
0
5
10
15
20
25
30
35
40
-50
Fig. 4. R
DS(on)
Normalized to I
D
= 3A Value vs.
Junction Temperature
V
GS
= 10V
4
I
D
- Amperes
6V
R
DS(on)
- Normalized
I
D
= 6A
I
D
= 3A
3
2
0
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 3A Value vs.
Drain Current
2.8
2.6
2.4
V
GS
= 10V
3
3.5
Fig. 6. Maximum Drain Current vs.
Case Temperature
T
J
= 125ºC
R
DS(on)
- Normalized
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
1
2
3
4
5
6
7
8
9
10
T
J
= 25ºC
2.5
I
D
- Amperes
2
1.5
1
0.5
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved
IXTJ6N150
Fig. 7. Input Admittance
9
8
10
7
T
J
= 125ºC
25ºC
- 40ºC
25ºC
12
T
J
= - 40ºC
Fig. 8. Transconductance
5
4
3
2
g
f s
- Siemens
6
8
I
D
- Amperes
6
125ºC
4
2
1
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
0
1
2
3
4
5
6
7
8
9
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
20
18
16
14
10
9
8
7
V
DS
= 750V
I
D
= 3A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
12
10
8
6
4
2
0
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
100
Fig. 12. Forward-Bias Safe Operating Area
f
= 1 MHz
R
DS(on)
Limit
25µs
Capacitance - PicoFarads
1,000
Ciss
10
100µs
I
D
- Amperes
1ms
1
Coss
100
10ms
0.1
Crss
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100ms
DC
10
0
5
10
15
20
25
30
35
40
0.01
10
100
1,000
10,000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTJ6N150
Fig. 13. Maximum Transient Thermal Impedance
10
1
Z
(th)JC
- ºC / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_6N150 (6N)02-23-12
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