BAS40 datasheet, PDF - EEWORLD Datasheet

BAS40: Description0.2 A, 40 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size398KB，2 Pages; ManufacturerHTSEMI（ Jin Yu Semiconductor ）; Websitehttp://www.htsemi.com

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0.2 A, 40 V, SILICON, SIGNAL DIODE

Parameter Name	Attribute value
Number of terminals	3
Number of components	1
Processing package description	GREEN, PLASTIC PACKAGE-3
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	single
Diode component materials	silicon
Maximum power consumption limit	0.2000 W
Diode type	Signal diode
Maximum reverse recovery time	0.0050 us
Maximum repetitive peak reverse voltage	40 V
Maximum average forward current	0.2000 A

	BAS40	BAS40-04	BAS40-05	BAS40-06
Description	0.2 A, 40 V, SILICON, SIGNAL DIODE	0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Number of terminals	3	-	3	3
Number of components	1	-	2	2
Processing package description	GREEN, PLASTIC PACKAGE-3	-	GREEN, PLASTIC PACKAGE-3	PLASTIC PACKAGE-3
state	DISCONTINUED	-	ACTIVE	ACTIVE
packaging shape	Rectangle	-	RECTANGULAR	Rectangle
Package Size	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	-	Yes	Yes
Terminal form	GULL WING	-	GULL WING	GULL WING
Terminal location	pair	-	DUAL	pair
Packaging Materials	Plastic/Epoxy	-	PLASTIC/EPOXY	Plastic/Epoxy
Craftsmanship	SCHOTTKY	-	SCHOTTKY	SCHOTTKY
structure	single	-	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
Diode component materials	silicon	-	SILICON	silicon
Diode type	Signal diode	-	SIGNAL DIODE	Signal diode
Maximum repetitive peak reverse voltage	40 V	-	40 V	40 V
Maximum average forward current	0.2000 A	-	0.2000 A	0.1200 A

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