ACE4826B
Dual N-Channel Enhancement Mode MOSFET
Description
This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resistance. This device is suitable for use as a
load switch, power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter
Systems.
Features
V
DS
60V, V
GS
20V, I
D
5.5A
R
DS(ON)
@10V, 30mΩ (typ.)
R
DS(ON)
@4.5V, 35mΩ (typ.)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Total Power Dissipation (Note1,2)
Note: 1. Surface Mounted on 1in pad area, t ≤10sec.
2. Rating for a single chip.
Symbol Max Unit
V
DSS
V
GSS
I
D
P
D
60
±20
5.5
1
V
V
A
W
O
Operating and Storage Junction Temperature Range T
J
/T
STG
-55/150
C
Packaging Type
SOP-8
VER 1.2
1
ACE4826B
Dual N-Channel Enhancement Mode MOSFET
Ordering information
ACE4826B XX + H
Halogen - free
Pb - free
FM : SOP-8
Electrical Characteristics
T
A
=25℃, unless otherwise noted.
Parameter
Drain-Source Breakdown
Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Drain-Source
On-Resistance
Diode Forward Voltage
Symbol
Conditions
Off characteristics
Min.
Typ.
Max. Unit
V
(BR)DSS
I
GSS
I
DSS
V
GS
=0V, I
D
=250 uA
V
DS
=0V,V
GS
=±20V
V
DS
=60V, V
GS
=0V
On characteristics
60
±100
1
V
uA
uA
V
GS(th)
R
DS(ON)
V
DS
=V
GS
, I
DS
=250uA
V
GS
=10V, I
D
=5.5A
V
GS
=4.5V, I
D
=4.5A
I
S
=2A, V
GS
=0V
Switching characteristics
1
1.4
30
35
3
41
52
1
15
V
mΩ
Drain-Source Diode Characteristics And Maximum Ratings
V
SD
td(on)
tr
td(off)
tf
Dynamic characteristics
Input Capacitance
Output Capacitance
REVERSE Transfer
Capacitance
Ciss
Coss
Crss
V
GS
=0V, V
DS
=10V, f=1MHz
1180
170
100
pF
V
GS
=10V, R
L
=5.4Ω, V
DS
=30V,
R
GEN
=3Ω, I
D
=5.5A
0.5
0.77
V
Turn-On Time
Turn-Off Time
20
40
15
nS
VER 1.2
2
Analogue and Mixed Signal
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