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2N7002DW_11

Description
N-Channel MOSFET
File Size182KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet View All

2N7002DW_11 Overview

N-Channel MOSFET

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
2N7002DW
Features
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Power Dissipation: 0.2W(Tamb=25 )
Drain Current: 115mA
Drain-source Voltage: 60V
Operating Junction Temperature: -55 to +150
Storage Temperature: -55 to +150
Marking: K72
Parameter
Drain-Source Breakdown Voltage*
(V
GS
=0Vdc, I
D
=10µAdc)
Gate-Threshold Voltage*
(V
DS
=V
GS
, I
D
=250µAdc)
Gate-body Leakage*
(V
DS
=0Vdc, V
GS
=f20Vdc)
Zero Gate Voltage Drain Current*
(V
DS
=60Vdc, V
GS
=0Vdc)
(V
DS
=60Vdc, V
GS
=0Vdc, T
j
=125 )
On-state Drain Current*
(V
DS
=7.5Vdc, V
GS
=10Vdc)
Drain-Source On-Resistance*
(V
GS
=5Vdc, I
D
=50mAdc)
(V
GS
=10Vdc, I
D
=500mAdc)
Forward Transconductance*
(V
DS
=10Vdc, I
D
=200mAdc)
Input Capacitance
V
DS
=25Vdc,
Output Capacitance
V
GS
=0Vdc
Reverse Transfer
f=1MHz
Capacitance
V
DD
=30Vdc,
V
GEN
=10Vdc
R
L
=150Ω,I
D
=200mA,
R
G
=25Ω
300­s, duty cycle
20%
Min
60
1.0
---
---
---
0.5
---
---
80
---
---
---
Typ
70
1.5
---
---
---
1.0
3.2
4.4
---
22
11
2
Max
---
2.0
f10
1
500
---
7.5
13.5
---
50
25
5
Units
Vdc
N-Channel MOSFET
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
V
(BR)DSS
V
th(GS)
I
GSS
I
DSS
G
SOT-363
Vdc
nAdc
µAdc
A
B
C
I
D(ON)
r
DS(on)
Adc
ms
K
H
M
J
D
L
g
FS
C
iss
C
OSS
C
rSS
pF
DIMENSIONS
INCHES
MM
MIN
MAX
0.15
0.35
1.15
1.35
2.15
2.45
0.65Nominal
1.20
1.40
1.80
2.20
---
0.10
0.90
1.10
0.26
0.46
0.08
0.15
Switching
t
d(on)
t
d(off)
Turn-on Time
Turn-off Time
---
---
7
11
20
ns
20
DIM
A
B
C
D
G
H
J
K
L
M
MIN
.006
.045
.085
.026
.047
.071
---
.035
.010
.003
MAX
.014
.053
.096
.055
.087
.004
.043
.018
.006
NOTE
* Pulse test, pulse width
Revision:
A
www.mccsemi.com
1 of 2
2011/01/01

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