They are PNP transistors mounted in Jedec TO-3 package.
They are intended for use in power amplifier and switching circuits applications.
Complement to NPN 2N5301 – 2N5302 – 2N5303.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Collector-Emitter Voltage
Ratings
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
Value
-40
-60
-80
-40
-60
-80
-5
-30
-20
50
-7.5
15
200
200
-65 to +200
Unit
V
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
TOT
T
J
T
S
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Power Dissipation
Junction Temperature
Storage Temperature
V
V
A
A
A
A
W
°C
@ T
C
= 25°
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
R
thJ-A
Ratings
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
0.875
35
Unit
°C/W
°C/W
1|4
24/09/2012
COMSET SEMICONDUCTORS
PNP 2N4398 – 2N4399 – 2N5745
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(BR)
Ratings
Test Condition(s)
2N4398
2N4399
2N5745
V
CB
= -40 V, I
E
= 0
2N4398
V
CB
= -60 V, I
E
= 0
2N4399
V
CB
= -80 V, I
E
= 0
2N5745
2N4398
V
CE
= -40 V, I
B
= 0
V
CE
= -60 V, I
B
= 0
2N4399
V
CE
= -80 V, I
B
= 0
2N5745
2N4398
V
EB
= -5 V, I
C
= 0
2N4399
2N5745
V
CE
= -40 V, V
BE
= 1.5 V 2N4398
V
CE
= -40 V, V
BE
= 1.5 V 2N4399
V
CE
= -40 V, V
BE
= 1.5 V 2N5745
V
CE
= -40 V, V
BE
= 1.5 V
2N4398
T
C
= 150°C
V
CE
= -40 V, V
BE
= 1.5 V
2N4399
T
C
= 150°C
V
CE
= -40 V, V
BE
= 1.5 V
2N5745
T
C
= 150°C
2N4398
2N4399
I
C
= -10 A, I
B
= -1 A
2N5745
2N4398
I
C
= -15 A, I
B
= -1.5 A
2N4399
2N5745
2N4398
I
C
= -20 A, I
B
= -2 A
2N4399
I
C
= -20 A, I
B
= -4 A
2N5745
2N4398
I
C
= -30 A, I
B
= -6 A
2N4399
2N4398
2N4399
I
C
= -10 A, I
B
= -1 A
2N5745
2N4398
I
C
= -15 A, I
B
= -1.5 A
2N4399
2N5745
2N4398
I
C
= -20 A, I
B
= -2 A
2N4399
I
C
= -20 A, I
B
= -4 A
2N5745
Min
-40
-60
-80
-
Typ
-
-
-
-
MAx Unit
-
-
-
-1
V
Collector-Emitter
I
C
= -200 mA
Breakdown Voltage (*) I
B
= 0
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff Current
I
CBO
mA
I
CEO
-
-
-5
mA
I
EBO
-
-
-5
mA
-
-
-5
I
CEX
Collector Cutoff
Current
mA
-
-
-10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.75
-1
-1
-1.5
-2
-4
-1.6
-1.7
-1.85
-2
-2.5
V
V
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
V
BE(SAT)
Base-Emitter
saturation Voltage (*)
2|4
24/09/2012
COMSET SEMICONDUCTORS
PNP 2N4398 – 2N4399 – 2N5745
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
C
= -15 A, V
CE
= -2 V
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
Min
-
-
-
-
40
-
-
15
Typ
-
-
-
-
-
-
-
-
MA
x
-1.7
-1.5
-3
-2.5
-
-
-
60
Unit
V
BE(on)
Base-Emitter on
Voltage (*)
I
C
= -10 A, V
CE
= -2 V
I
C
= -30 A, V
CE
= -4 V
I
C
= -20 A, V
CE
= -4 V
I
C
= -1 A, V
CE
= -2 V
I
C
= -15 A, V
CE
= -2 V
I
C
= -10 A, V
CE
= -2 V
I
C
= -30 A, V
CE
= -2 V
I
C
= -20 A, V
CE
= -4 V
V
h
FE
DC Current Gain (*)
-
5
4
2
-
-
-
-
-
-
f
T
Transition Frequency
V
CE
= -10 V, I
C
= -1 A
f= 1 MHz
MHz
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2 %
3|4
24/09/2012
COMSET SEMICONDUCTORS
PNP 2N4398 – 2N4399 – 2N5745
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
A
B
C
D
F
G
N
P
R
U
V
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
max
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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