1N914A datasheet, PDF - EEWORLD Datasheet

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1N914A: Description0.15 A, SILICON, SIGNAL DIODE, DO-35; Categorysemiconductor Discrete semiconductor; File Size200KB，3 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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1N914A Overview

0.15 A, SILICON, SIGNAL DIODE, DO-35

1N914A Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	DO-35, 2 PIN
state	ACTIVE
packaging shape	ROUND
Package Size	LONG FORM
Terminal form	WIRE
Terminal location	AXIAL
Packaging Materials	UNSPECIFIED
structure	SINGLE
Shell connection	ISOLATED
Diode component materials	SILICON
Diode type	SIGNAL DIODE
Maximum average forward current	0.1500 A

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1N914/1N914A/1N914B

Small Signal Switching Diodes

REVERSE VOLTAGE: 75 V

CURRENT： 75 mA

Features

◇

Glass sealed envelope. (MSD)

=100V guaranteed

High reliability

DO - 35

Mechanical Data

◇

Case: DO-35, glass case

Polarity: Color band denotes cathode

Weight: 0.004 ounces, 0.13 grams

Dimensions in millimeters

Maximum Ratings

Rating at 25 C ambient temperature unless otherwise specified.

1N914,1N914A,1N914B

Maximum DC reverse voltage

Maximum recurrent peak reverse voltage

Average forward rectified current

half wave rectification with resistive load

t<1ms

t=1ms

t=1s

Power dissipation (note)

Junction temperature

Storage temperature range

Forward surge current

UNITS

℃

FSM

tot

STG

100

4.0

1.0

0.5

250

175

- 65 --- + 175

Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Min

Forw ard voltage @1N914,1N914A,I

=10mA

1N914B,I

=5mA

1N914B,I

=100mA

Leakage current

=20V

=75V

=20V,T

=150℃

Capacitance

@ V

=0V,f=1MH

Typ

Max

1.0

0.72

1.0

2.5

500

UNITS

µA

℃/W

tot

θjA

0.62

Reverse recovery time @I

=10mA,I

=10mA,

=100Ω,measured at I

=1mA

Voltage rise w hen sw itching on

tested w ith 50mA pulses t

=20ns

Thermal resistance junction to ambient (note )

Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

http://www.luguang.cn

mail:lge@luguang.cn

1N914A Related Products

	1N914A	1N914	1N914B
Description	0.15 A, SILICON, SIGNAL DIODE, DO-35	0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35	0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35
Number of terminals	2	-	2
Number of components	1	-	1
state	ACTIVE	-	DISCONTINUED
packaging shape	ROUND	-	round
Package Size	LONG FORM	-	LONG FORM
Terminal form	WIRE	-	Wire
Terminal location	AXIAL	-	AXIAL
Packaging Materials	UNSPECIFIED	-	Glass
structure	SINGLE	-	single
Shell connection	ISOLATED	-	isolation
Diode component materials	SILICON	-	silicon
Diode type	SIGNAL DIODE	-	Signal diode
Maximum average forward current	0.1500 A	-	0.2000 A

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