1N5818 datasheet, PDF - EEWORLD Datasheet

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1N5818: Description1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL; Categorysemiconductor Discrete semiconductor; File Size36KB，1 Pages; ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.

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1N5818 Overview

1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL

1N5818 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	Plastic, DO-41, 2 PIN
state	TRANSFERRED
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
Terminal location	AXIAL
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum repetitive peak reverse voltage	30 V
Maximum average forward current	1 A

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.

1N5817 THRU 1N5819

SCHOTTKY BARRIER RECTIFIER

VOLTAGE：20-40V

CURRENT：1.0A

FEATURES

·Low

switching noise

·Low

forward voltage drop

·High

current capability

·High

switching capabitity

·High

reliability

·High

surge capability

DO-41

1.0(25.4)

MIN.

.205(5.2)

.166(4.2)

.034(0.9)

.028(0.7)

DIA.

MECHANICAL DATA

·Case:

Molded plastic

·Epoxy:

UL94V-0 rate flame retardant

·Lead:

MIL-STD- 202E, Method 208 guaranteed

·Polarity:Color

band denotes cathode end

·Mounting

position:

Any

·Weight:

0.33 grams

.107(2.7)

.080(2.0)

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward rectified Current

.375”(9.5mm) lead length at T

L

=75°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

Maximum Instantaneous Forward Voltage

at 1.0A DC

Maximum Forward Voltage at 3.1A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

T

A

=25°C

T

A

=100°C

V

RRM

V

RMS

V

DC

I

o

I

FSM

0.45

0.75

I

R

C

J

R

θ

JA

1N5817

20

14

20

1N5818

30

21

30

1.0

25

0.55

0.875

1.0

mA

10.0

110

80

pF

°C/W

0.60

0.90

1N5819

40

28

40

units

V

A

V

F

V

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Notes:

1. Measured at 1MHz and applied reverse voltage of 4.0 volts

2. Thermal Resistance from junction to ambient at .375”(9.5mm) lead length

１

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1N5818 Related Products

	1N5818	1N5817	1N5819
Description	1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL	RECTIFIER DIODE,SCHOTTKY,20V V(RRM),DO-41	1 A, 45 V, SILICON, SIGNAL DIODE
state	TRANSFERRED	CONSULT MFR	DISCONTINUED
Diode type	Signal diode	rectifier diode	Signal diode
Number of terminals	2	-	1
Number of components	1	-	1
Processing package description	Plastic, DO-41, 2 PIN	-	DIE-2
packaging shape	round	-	SQUARE
Package Size	LONG FORM	-	UNCASED chip
Terminal form	Wire	-	NO
Terminal location	AXIAL	-	UPPER
Packaging Materials	Plastic/Epoxy	-	UNSPECIFIED
Craftsmanship	SCHOTTKY	-	SCHOTTKY
structure	single	-	single
Shell connection	isolation	-	isolation
Diode component materials	silicon	-	silicon
Maximum repetitive peak reverse voltage	30 V	-	45 V
Maximum average forward current	1 A	-	1 A

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