1N5806U
Aerospace 2.5 A fast recovery rectifier
Features
■
■
■
■
■
■
■
■
■
Aerospace applications
Surface mount hermetic package
High thermal conductivity materials
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop
Package mass: 0.12 g
Target radiation qualification
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
ESCC qualified
A
K
K
A
LCC2A
Description
This power ultrafast recovery rectifier is designed
and packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC2A
package whose footprint is 100% compatible with
industry standard solutions in D5A.
The 1N5806U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection.
■
Table 1.
Order code
1N5806UA1
Device summary
(1)
ESCC detailed
specification
-
5101/014/13
5101/014/14
Quality level
Engineering
model
Flight part
Flight part
Lead finish
Gold plated
Gold plated
Solder dip
EPPL
-
Y
Y
2.5 A
150 V
175 °C
1.0 V
I
F(AV)
V
RRM
T
j(max)
V
F (max)
1N5806U01A
1N5806U02A
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
March 2010
Doc ID 15986 Rev 2
1/7
www.st.com
7
Characteristics
1N5806U
1
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
T
sol
Characteristics
Absolute ratings (limiting values)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward rectified current
Forward surge current
Storage temperature range
Maximum operating junction temperature
Maximum soldering temperature
(1)
T
c
= 135 °C,
δ
= 0.5
t
p
= 8.3 ms sinusoidal
t
p
= 10 ms sinusoidal
Value
150
6
2.5
35
A
33
-65 to + 175
175
245
°C
°C
°C
Unit
V
A
A
1. Maximum duration 5 s. The same package must not be re-soldered until 3 minutes have elapsed.
Table 3.
Symbol
R
th (j-c) (1)
Thermal resistance
Parameter
Junction to case
Value
13
Unit
°C/W
1. Package mounted on infinite heatsink
Table 4.
Symbol
Static electrical characteristics
Parameter
Tests conditions
T
j
= 25 °C
V
R
= 150 V
V
R
= 160 V
Min.
-
-
-
-
-
I
F
= 1 A
I
F
= 2.5 A
-
-
-
Typ.
-
-
-
-
-
-
-
-
Max.
0.5
20
10
10
880
800
1075
1000
mV
µA
Unit
I
R (1)
Reverse current
T
j
= 125 °C
T
j
= 25 °C
T
j
= -65 °C
T
j
= 25
°C
T
j
= 125
°C
T
j
= -65
°C
T
j
= 25
°C
V
F (2)
Forward voltage
1. Pulse test: tp = 5 ms,
δ
< 2%
2. Pulse test: tp = 680 µs,
δ
< 2%
To evaluate the conduction losses use the following equation:
P = 0.70 x I
F(AV)
+ 0.10 x I
F2(RMS )
2/7
Doc ID 15986 Rev 2
1N5806U
Table 5.
Symbol
Characteristics
Dynamic characteristics
Parameter
Test conditions
I
F
= I
R
= 0.5 A, I
rr
= 0.05 A, dI/dt = -65 A/µs
(min.)
I
F
= 1 A, V
R
= 30 V, dI/dt = -50 A/µs,
Min. Typ. Max. Unit
-
-
-
-
-
-
-
-
-
-
25
ns
30
2.2
15
25
V
ns
pF
t
RR
V
FP
t
FR
C
j
Reverse recovery time
Forward recovery voltage
Forward recovery time
Diode capacitance
I
FM
= 250 mA
I
FM
= 250 mA, V
RF
= 1.1 x V
F
V
R
= 10 V, F = 1 MHz
Figure 1.
I
FM
(A)
Forward voltage drop versus
forward current (typical values)
Figure 2.
I
FM
(A)
10
Forward voltage drop versus
forward current (maximum values)
10
8
8
6
6
4
T
j
=125 °C
4
T
j
=125 °C
2
T
j
=25 °C
T
j
=-65 °C
2
T
j
=25 °C
T
j
=-65 °C
V
FM
(V)
V
FM
(V)
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Figure 3.
Reverse leakage current versus
reverse voltage applied
(typical values)
Figure 4.
Relative variation of thermal
impedance, junction to case,
versus pulse duration
I
R
(µA)
1.E+01
1.0
0.9
Z
th(j-c)
/R
th(j-c)
1.E+00
T
j
=125 °C
0.8
0.7
LCC2A
1.E-01
T
j
=75 °C
0.6
0.5
0.4
Single pulse
1.E-02
T
j
=25 °C
0.3
1.E-03
0.2
V
R
(V)
1.E-04
0
20
40
60
80
100
120
140
160
0.1
0.0
1.E-06
t
P
(s)
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Doc ID 15986 Rev 2
3/7
Characteristics
Figure 5.
Reverse recovery time
versus dI
F
/dt
Figure 6.
1N5806U
Junction capacitance versus
reverse voltage applied
(typical values)
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
t
RR
(ns)
40
36
32
28
24
20
16
12
8
4
0
0
50
100
150
200
250
300
350
400
450
500
T
j
=25 °C
T
j
=125 °C
I
F
=I
F(AV)
V
R
=120 V
C(pF)
100
10
dI
F
/dt(A/µs)
1
1
10
V
R
(V)
100
1000
4/7
Doc ID 15986 Rev 2
1N5806U
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Table 6.
Leadless chip carrier 2 (LCC2A) package dimensions
Dimensions
Ref.
Millimeters
Min.
A
(1)
A
B
D
Note 1
Inches
Min.
Typ.
Max.
Typ. Max.
2.03
4.67
2.46
1.70
-
1.3
2.16
0.86
0.15
0.15
0.20
2.20
4.87
2.59
1.87
0.71
-
-
-
-
-
-
1.86
4.54
2.33
1.53
0.48
-
-
-
-
-
-
0.073 0.080 0.087
0.179 0.184 0.192
0.92
0.97
0.102
B
C
D
2
C
1
0.060 0.067 0.074
0.019
-
-
-
-
-
-
-
0.051
0.085
00.34
0.006
0.006
0.008
0.028
-
-
-
-
-
-
F
Note 1
Pin 2 Cathode
E
Note 1
E
Pin 1 Anode
E
F
H
1
2
r1
G
G
H
I
r1
r2
I
r2
Note 1: The anode is identified by metallization in two top internal angles and the index mark.
1. Measurement prior to solder coating the mounting pads on bottom of package
Doc ID 15986 Rev 2
5/7
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