TC1601
REV4_20060510
2W High Linearity and High Efficiency GaAs Power FETs
FEATURES
!
2W Typical Power at 6 GHz
!
Linear Power Gain: G
L
= 12 dB Typical at 6 GHz
!
High Linearity: IP3 = 43 dBm Typical at 6 GHz
!
Via Holes Source Ground
!
Suitable for High Reliability Application
!
Breakdown Voltage: BV
DGO
≥
15 V
!
Lg = 0.35
µm,
Wg = 5 mm
PHOTO ENLARGEMENT
!
High Power Added Efficiency: PAE
≥
43 % for Class A Operation
!
Lg = 0.35
µm,
Wg = 5 mm
!
Tight Vp ranges control
!
High RF input power handling capability
!
100 % DC Tested
DESCRIPTION
The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high
linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which
provides low thermal resistance and low inductance. The short gate length enables the device to be used in circuits
up to 20 GHz. All devices are 100 % DC tested to assure consistent quality. Bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn
die-attach. Typical applications include commercial and military high performance power amplifier.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
P
1dB
G
L
IP3
PAE
I
DSS
g
m
V
P
R
th
Linear Power Gain,
f
Conditions
Output Power at 1dB Gain Compression Point ,
f
= 6 GHz V
DS
= 8 V, I
DS
= 500 mA
= 6 GHz V
DS
= 8 V, I
DS
= 500 mA
= 6 GHz
MIN
32.5
11
TYP
33
12
43
43
1.2
850
-1.7**
15
18
6
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
Intercept Point of the 3
rd
-order Intermodulation,
f
= 6 GHz V
DS
= 8 V, I
DS
=500 mA,*P
SCL
= 20 dBm
Power Added Efficiency at 1dB Compression Power,
f
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 10 mA
Thermal Resistance
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
= 2.5 mA
Note:
* P
SCL
: Output Power of Single Carrier Level.
* *For the tight control of the pinch-off voltage . TC1601’s are divided into 3 groups:
(1)
TC1601P1519
: Vp = -1.5V to -1.9V (2)
TC1601P1620
: Vp = -1.6V to -2.0V
(3)TC1601P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/4
TC1601
REV4_20060510
ABSOLUTE MAXIMUM RATINGS (T
A
=25
°
C) RECOMMANDED OPERATING CONDITION
Symbol
V
DS
V
GS
I
D
P
T
T
CH
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
12 V
-5 V
1.2 A
7.7 W
175
°C
- 65
°C
to +175
°C
Symbol
V
DS
I
D
Parameter
Drain to Source Voltage
Drain Current
Rating
8V
500 mA
CHIP DIMENSIONS
1060
±
12
D
D
D
D
470
±
12
G
G
G
G
Units: Micrometers
Chip Thickness: 50
Gate Pad: 76.0 x 59.5
Drain Pad: 86.0 x 76.0
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
2/4
TC1601
REV4_20060510
TYPICAL SCATTERING PARAMETER
(V
DS
= 8 V, I
DS
= 500 mA)
FREQUENCY
(GHz)
0.05
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
S11
MAG
0.99574
0.98587
0.96544
0.95271
0.94572
0.94174
0.93933
0.93779
0.93676
0.93605
0.93554
0.93518
0.93491
0.93472
0.93458
0.93448
0.93441
0.93437
0.93435
0.93435
0.93436
0.93501
0.93615
0.93754
0.93905
0.9406
0.94213
0.94358
0.94495
0.94621
0.94736
0.94841
0.94935
0.95019
0.95096
0.95164
0.95225
ANG
-28.397
-53.672
-90.648
-113.2
-127.35
-136.8
-143.46
-148.39
-152.16
-155.14
-157.54
-159.53
-161.19
-162.59
-163.81
-164.86
-165.78
-166.6
-167.32
-167.97
-168.55
-172.24
-174.09
-175.19
-175.95
-176.5
-176.94
-177.29
-177.6
-177.87
-178.11
-178.34
-178.54
-178.73
-178.91
-179.08
-179.23
MAG
37.17
34.038
26.53
20.626
16.544
13.697
11.638
10.095
8.901
7.9524
7.1819
6.5443
6.0082
5.5514
5.1576
4.8147
4.5133
4.2465
4.0085
3.7949
3.6022
2.3682
1.7392
1.3557
1.0969
0.91049
0.77029
0.66149
0.57506
0.50515
0.44776
0.40006
0.36001
0.32605
0.29703
0.27204
0.25036
S21
ANG
165.02
151.75
132.47
120.66
113.1
107.88
104.03
101.03
98.595
96.548
94.779
93.216
91.811
90.528
89.341
88.233
87.19
86.2
85.254
84.347
83.473
75.87
69.39
63.538
58.161
53.193
48.597
44.343
40.401
36.746
33.3519
30.196
27.254
24.506
21.933
19.5189
17.248
S12
MAG
0.0078177
0.014318
0.022319
0.026028
0.027836
0.028806
0.029372
0.029723
0.029952
0.030104
0.030208
0.030278
0.030325
0.030354
0.03037
0.030375
0.030371
0.030361
0.030345
0.030324
0.030298
0.02987
0.02924
0.02848
0.02764
0.02676
0.02587
0.02499
0.02415
0.02334
0.02259
0.0219
0.02126
0.02068
0.02015
0.01968
0.01926
ANG
75.215
62.138
43.232
31.814
24.636
19.799
16.331
13.717
11.664
10.001
8.6153
7.4363
6.4143
5.5145
4.7118
3.9874
3.3272
2.7205
2.1586
1.635
1.1442
-2.6275
-5.282
-7.316
-8.8846
-10.055
-10.869
-11.358
-11.554
-11.487
-11.185
-10.675
-9.985
-9.1377
-8.1559
-7.06
-5.8689
MAG
0.16856
0.26521
0.3948
0.45652
0.48709
0.50388
0.51405
0.52079
0.5256
0.52927
0.53225
0.53479
0.53706
0.53916
0.54115
0.54309
0.545
0.54691
0.54882
0.55076
0.55273
0.57477
0.60072
0.62891
0.65763
0.68559
0.71196
0.73629
0.7584
0.77829
0.79607
0.81191
0.82598
0.83848
0.84959
0.85948
0.8683
S22
ANG
-68.237
-97.116
-125.14
-139.36
-147.65
-152.91
-156.46
-158.96
-160.78
-162.13
-163.14
-163.92
-164.51
-164.95
-165.29
-165.54
-165.72
-165.84
-165.92
-165.96
-165.97
-165.17
-164.02
-163.13
-162.62
-162.45
-162.56
-162.88
-163.33
-163.88
-164.47
-165.1
-165.74
-166.37
-167
-167.6
-168.19
* The data does not include gate, drain and source bond wires.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
3/4
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