SS239
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Packages
Features and Benefits
–
–
–
–
Operation down to 2.5V
Micropower consumption for battery
powered applications
High sensitivity for direct reed switch
replacement applications
Omnipolar, output switches with absolute
value of North or South pole from magnet
3 pin SOT23 (suffix SO)
3 pin SIP (suffix UA)
Functional Block Diagram
Application Examples
–
–
–
–
Solid-state switch
Handheld Wireless Handset Awake Switch
Lid close sensor for battery powered devices
Magnet proximity sensor for reed switch
replacement in low duty cycle applications
Chopper stabilized amplifier
stage2．Description
The SS239 Omnipolar Hall effect sensor IC is fabricated
from mixed signal CMOS technology. It incorporates
advanced chopper-stabilization techniques to provide
accurate and stable magnetic switch points.
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and
analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a
“Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall
element is evaluated against the predefined thresholds. If the flux density is above or below the B
OP
/B
RP
thresholds
then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is
latched in its previous state. The design has been optimized for service in applications requiring extended operating
lifetime in battery powered systems.
The output transistor of the SS239 will be latched on (B
OP
) in the presence of a sufficiently strong South or North
magnetic field facing the marked side of the package. The output will be latched off (B
RP
) in the absence of a
magnetic field.
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SS239
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Typical Application Circuit
SEC's pole-independent sensing technique allows for operation with either a north pole or south pole magnet
orientation, enhancing the manufacturability of the device. The state-of-the-art technology provides the same output
polarity for either pole face.
It is strongly recommended that an external bypass be connected (in close proximity to the Hall sensor) between the
supply and ground of the device to reduce both external noise and noise generated by the chopper-stabilization
technique. This is especially true due to the relatively high impedance of battery supplies.
Internal Timing Circuit
Current
Period
I
aw
Sample & Output
Latched
I
avg
I
sp
Awake Taw: 175μs
0
Sleep Tsl: 70ms
Time
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May 1, 2012
SS239
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Pin Definitions and Descriptions
SOT Pin
№
SIP Pin
№
1
2
3
1
3
2
Name
VDD
OUT
GND
Type
Supply
Output
Ground
Function
Supply Voltage pin
Open Drain Output pin
Ground pin
Table 1: Pin definitions and descriptions
Absolute Maximum Ratings
Parameter
Symbol
Value
6
5
6
5
-40 to 85
-50 to 150
4000
Units
V
mA
V
mA
°C
°C
V
Supply Voltage (operating)
V
DD
Supply Current
I
DD
Output Voltage
V
OUT
Output Current
I
OUT
Operating Temperature Range T
A
Storage Temperature Range
T
S
ESD Sensitivity
-
Table 2: Absolute maximum ratings
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability.
DC Electrical Characteristics
DC Operating Parameters: T
A
= 25℃, V
DD
= 2.75V.
Parameter
Symbol
Test Conditions
Operating
Average
I
OUT
= 1mA
Operating
Operating
Min
2.5
Typ
3
5
Max
5.5
1.0
0.4
175
70
Units
V
µA
mA
V
µs
ms
Supply Voltage
V
DD
Supply Current
I
DD
Output Current
I
OUT
Saturation Voltage
V
SAT
Awake mode time
T
AW
Sleep mode time
T
SL
Table 3: DC Electrical Characteristics
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SS239
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Magnetic Characteristics
Output Voltage (V)
3.0
2.5
2.0
B
OPN
1.5
1.0
0.5
0
-80
-60
-40
-20
0
20
40
60
80
ON
B
RPN
B
RPS
B
OPS
OFF
Magnetic Flux (Gauss)
Operating Parameters: T
A
= 25°C, V
DD
= 2.75V
DC
SS239
Parameter
Operating Point
Release Point
Hysteresis
Symbol
B
OP
B
RP
B
HYST
Min
-
+/-5
-
Type
+/-35
+/-21
14
Max
+/-60
-
-
Units
Gs
Gs
Gs
Table 4: Magnetic Specifications
ESD Protection
Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7
Limit Values
Parameter
Symbol
Unit
Min
Max
ESD Voltage
V
ESD
4
kV
Notes
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SS239
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Performance Characteristics
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