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SS110

Description
1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size314KB,2 Pages
ManufacturerWILLAS ELECTRONIC CORP.
Websitehttp://www.willas.com.tw/
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SS110 Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC

SS110 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMA, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage100 V
Maximum average forward current1 A
WILLAS
1.0AMP SCHOTTKY BARRIER RECTIFIERS
SMA PACKAGE
.181(4.60)
.160(4.06)
SS12
THRU
SS120
FEATURES
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* High reliability
* RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.067(1.70)
.051(1.29)
.110(2.79)
.086(2.18)
.012(.305)
.006(.152)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Mounting position: Any
* Weight: 0.066 gram
.091(2.31)
.067(1.70)
.059(1.50)
.035(0.89)
.008 Max.
(.203)
.208(5.28)
.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance
Typical Junction Capacitance
(Note 1)
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at
Rated DC Blocking Voltage
@TA=25℃
@TA=25℃
@TA=100℃
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
R
ΘJC
C
J
T
J
T
STG
70
60
-55 to +125
-55 to +150
SYMBOL SS12 SS13 SS14 SS15 SS16 SS18 SS110 SS115 SS120
SS12 SS13 SS14 SS15 SS16 SS18 SS110 SS115 SS120
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
1.0
30.0
70
30
50
35
80
56
80
100
70
100
150
105
150
200
140
200
Volts
Volts
Volts
Amps
Amps
℃/W
℃/W
P
F
UNIT
UNIT
Volts
mAmps
SYMBOL SS12 SS13 SS14 SS15 SS16 SS18 SS110 SS115 SS120
V
F
I
R
0.50
0.70
0.85
0.87
0.2
5.0
0.90
Note : 1.Measured at 1 MHz and applied reverse voltage of 4.0 volts.
2012.10
WILLAS ELECTRONIC CORP.

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SS110 SS120 SS115 SS12 SS13 SS14 SS15 SS16 SS18
Description 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 1 A, 80 V, SILICON, SIGNAL DIODE, DO-214AC
state ACTIVE ACTIVE - ACTIVE ACTIVE ACTIVE CONSULT MFR ACTIVE -
Diode type Signal diode Signal diode - Signal diode Signal diode Signal diode Signal diode Signal diode -

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