CYStech Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Spec. No. : C452Q8
Issued Date : 2009.05.13
Revised Date :
Page No. : 1/6
MTB14P03Q8
Description
BV
DSS
I
D
R
DSON(max)
-30V
-12A
14mΩ
The MTB14P03Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
•
R
DS(ON)
=14m
Ω
@V
GS
=-10V, I
D
=-12A
R
DS(ON)
=21m
Ω
@V
GS
=-5V, I
D
=-9A
•
Simple drive requirement
•
Low on-resistance
•
Fast switching speed
•
Pb-free and Halogen-free package
Equivalent Circuit
MTB14P03Q8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MTB14P03Q8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25
°C
Continuous Drain Current @T
C
=100
°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=-20A, R
G
=25Ω
T
A
=25
°C
Power Dissipation
T
A
=100
°C
Operating Junction and Storage Temperature Range
Note : 1.Pulse width limited by maximum junction temperature.
Spec. No. : C452Q8
Issued Date : 2009.05.13
Revised Date :
Page No. : 2/6
Symbol
BV
DSS
V
GS
I
D
I
D
I
DM
I
AS
E
AS
P
D
Tj ; Tstg
Limits
-30
±25
-12
-9
-48
-20
20
3
1.5
-55~+175
Unit
V
V
A
A
A
A
mJ
W
W
°C
Electrical Characteristics
(Tc=25°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
DSS
I
D(ON)
R
DS(ON)
G
FS
Dynamic
Ciss
Coss
Crss
t
d(ON)
(Note 1&2)
t
r
(Note 1&2)
t
d(OFF)
(Note 1&2)
t
f
(Note 1&2)
Qg(V
GS
=10V)
(Note 1&2)
Qg(V
GS
=5V)
(Note 1&2)
Qgs
(Note 1&2)
Qgd
(Note 1&2)
-
-
-
-
-
-
-
-
-
-
-
6375
1612
1481
26
22
75
15
56
40
15
18
-
-
-
-
-
-
-
-
-
-
-
pF
-30
-1
-
-
-
-12
-
-
-
-
-1.5
-
-
-
-
12
17
28
-
-3
±100
-1
-10
-
14
21
-
V
V
nA
μA
μA
A
mΩ
S
Test Conditions
V
GS
=0, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=±25V, V
DS
=0
V
DS
=-24V, V
GS
=0
V
DS
=-20V, V
GS
=0, Tj=125°C
V
DS
=-5V, V
GS
=-10V
I
D
=-12A, V
GS
=-10V
I
D
=-9A, V
GS
=-5V
V
DS
=-5V, I
D
=-12A
(Note 1)
(Note 1)
(Note 1)
V
DS
=-15V, V
GS
=0, f=1MHz
V
DS
=-15V, I
D
=-1A,
V
GS
=-10V, R
G
=2.7
Ω
ns
nC
V
DS
=-15V, I
D
=-10A,
V
GS
=-10V,
MTB14P03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C452Q8
Issued Date : 2009.05.13
Revised Date :
Page No. : 3/6
Electrical Characteristics(Cont.)
(Tj=25°C, unless otherwise specified)
Symbol
Min.
Source-Drain Diode
I
S
-
I
SM
(Note 3)
-
V
SD
(Note 1)
-
trr
-
Qrr
-
Typ.
-
-
-
52
60
Max.
-3.6
-14.4
-1.2
-
-
Unit
A
V
ns
nC
I
F
=I
S
, V
GS
=0V
I
F
=I
S
, dI
F
/dt=100A/μs
Test Conditions
Note : 1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
2.Independent of operating temperature
3.Pulse width limited by maximum junction temperature
Thermal Resistance Ratings
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
(Note)
Symbol
R
θJC
R
θJA
Typical
Maximum
25
50
Unit
°C / W
Note : 50°C / W when mounted on a 1 in
2
pad of 2 oz copper.
MTB14P03Q8
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
On-Region Characteristics
50
V
GS
= - 10V
40
- 6.0V
- 4.5V
2.2
2.4
V
GS
= - 3.5 V
Spec. No. : C452Q8
Issued Date : 2009.05.13
Revised Date :
Page No. : 4/6
On-Resistance Variation with Drain Current and Gate Voltage
- 4.0V
R
DS(ON)
-Normalized
Drain-S
ource On-Resistance
2.0
1.8
1.6
1.4
1.2
-7V
1
0.8
0
10
20
30
- I
D
- Drain Current(A)
40
50
- 10 V
- 4.0 V
- 4.5 V
-5V
-6V
-I
D
- Drain Current(A)
30
- 3.5V
20
- 3.0V
10
0
0
1
2
3
-V
DS
- Drain-to-S
ource Voltage(V)
1.6
On-Resistance Variation with Temperature
I
D
= - 12 A
V
GS
= - 10V
On-Resistance Variation with Gate-to-S
ource Voltage
0.06
I
D
= - 6 A
0.05
R
DS(ON)
- On-Resistance(
Ω
)
0.04
0.03
0.02
0.01
T
A
= 25° C
T
A
= 125° C
1.4
R
DS(on)
- Normalized
Drain-S
ource On-Resistance
1.2
1.0
0.8
0.6
-50
-25
75 100
0
25
50
T
J
- Junction Temperature (° C)
125
150
175
0
2
4
6
- V
GS
- Gate-to-S
ource Voltage(V)
8
10
Transfer Characteristics
40
V
DS
= - 5V
Body Diode Forward Voltage Variation with S
ource Current and Temperature
100
- 55° C
25° C
10
-Is - Reverse Drain Current(A)
V
GS
= 0V
30
1
T
A
= 125° C
25°C
-55°C
-I
D
- Drain Current(A)
20
T
A
= 125°C
0.1
0.01
10
0.001
0
1.5
2
2.5
3
-V
GS
- Gate-to-Source Voltage(V)
3.5
4
0.0001
0
0.6
0.2
0.4
0.8
-V
SD
- Body Diode Forward Voltage(V)
1.0
1.2
MTB14P03Q8
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Gate Charge Characteristics
10
I
D
= - 12A
- V
GS
- Gate-to-S
ource Voltage(V)
8
V
DS
= - 5V
- 15V
C
iss
7500
Spec. No. : C452Q8
Issued Date : 2009.05.13
Revised Date :
Page No. : 5/6
C
apacitance C
haracteristics
f = 1 MHz
V =0 V
GS
- 10V
6000
Capacitance(pF
)
6
4500
4
3000
C
oss
1500
C
rss
2
0
0
15
30
Q
g
- Gate Charge(nC)
45
60
75
0
0
15
5
10
- V
DS
, Drain-to-S
ource Voltage(V)
20
25
30
Maximum S Operating Area
afe
100
R
DS(ON)
Limit
10
-Is , Drain Current(A)
100
μ
s
40
P(pk),Peak Transient Power(W)
50
S
ingle Pulse Maximum Power Dissipation
S
ingle Pulse
R
JA
= 125° C/ W
θ
T
A
= 25° C
1ms
10ms
100ms
1s
10s
DC
30
1
20
0.1
0.01
0.1
V
GS
= - 10 V
S
ingle Pulse
R
JA
= 125°C / W
θ
T
A
= 25°C
1
10
-V
SD
, Drain - S
ource Voltage(V)
100
10
0
0.001
0.01
0.1
1
t
1
,Time (sec)
10
100
1000
Transient Thermal Response Curve
1
Duty Cycle = 0.5
r(t),Normalized Effective
Transient Thermal Resistance
0.2
0.1
0.1
0.05
Notes
:
0.02
0.01
P
DM
t1
t2
0.01
1.Duty Cycle,D =
2.R
θ
JA
=125°C/ W
t1
t2
S
ingle Pulse
3.T
J
- T
A
= P * R
JA
(t)
θ
4.R
JA
(t)=r(t) + R
JA
θ
θ
0.001
10
-4
10
-3
10
-2
10
t ,Time (sec)
-1
1
10
100
1000
MTB14P03Q8
CYStek Product Specification
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