SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
A
KTD2092
EPITAXIAL PLANAR NPN TRANSISTOR
C
High h
FE
: h
FE
=500 1500 (I
C
=0.5A).
Low Collector Saturation :V
CE(sat)
=0.35V(Max.) (I
C
=1A).
E
G
B
P
FEATURES
S
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
H
S
K
L
L
R
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25
Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
25
T
j
T
stg
150
-55 150
RATING
100
80
7
3
A
5
1
2
W
A
UNIT
V
V
V
1
2
3
N
N
D
M
D
J
MILLIMETERS
_
10.0 + 0.3
_ 0.3
15.0 +
_
2.70 + 0.3
0.76+0.09/-0.05
_
Φ3.2
+ 0.2
_
3.0 + 0.3
_
12.0 + 0.3
0.5+0.1/-0.05
_
13.6 + 0.5
_
3.7 + 0.2
1.2+0.25/-0.1
1.5+0.25/-0.1
_
2.54 + 0.1
_
6.8 + 0.1
_
4.5 + 0.2
_
2.6 + 0.2
0.5 Typ
F
Q
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
COLLECTOR
BASE
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
h
FE
(2)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Forward Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching Time
Storage Time
Fall Time
V
CE(sat)
V
BE(sat)
V
ECF
f
T
C
ob
t
on
T
stg
t
f
I
B1
0
I
B2
I
B2
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(1)
TEST CONDITION
V
CB
=80V, I
E
=0
V
EB
=7V, I
C
=0
I
C
=50mA, I
B
=0
V
CE
=1V, I
C
=0.5A
V
CE
=1V, I
C
=1A
I
C
=1A, I
B
=0.01A
I
C
=1A, I
B
=0.01A
I
E
=3A, I
B
=0
V
CE
=5V, I
C
=1A
V
CE
=10V, I
E
=0, f=1MHz
OUTPUT
20µsec
30Ω
INPUT
I
B1
MIN.
-
-
80
500
150
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
140
30
0.5
5.0
0.7
MAX.
10
10
-
1500
-
0.35
1.2
2.5
-
-
-
-
-
UNIT
A
A
V
V
V
V
MHz
pF
S
I
B1
=-I
B2
=10mA
DUTY CYCLE < 1%
V
CC
=30V
2007. 5. 22
Revision No : 3
1/2
KTD2092
I
C
- V
CE
COLLECTOR CURRENT I
C
(A)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
2
4
6
8
0
2
1.4
1
0.5
I
B
=0.2mA
20
10
4
COMMON
EMITTER
Ta=25 C
h
FE
- I
C
3k
DC CURRENT GAIN h
FE
COMMON EMITTER
Tc=25 C
1k
500
300
V
CE
=2V
V
CE
=5V
100
50
0.05
V
CE
=1V
10
12
14
16
0.1
0.3
1
3
5
10
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
h
FE
- I
C
3k
COMMON EMITTER
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
3
COMMON EMITTER
I
C
/I
B
=100
DC CURRENT GAIN h
FE
Tc=100 C
V
CE
=1V
1
0.5
0.3
0
10
c=
T
C
1k
500
300
Tc=25 C
Tc=-55 C
V
CE
=2V
V
CE
=1V
V
CE
=5V
0.1
0.05
0.02
0.05
Tc=25 C
Tc=-55 C
100
50
0.05
0.1
0.3
1
3
5
10
0.1
0.3
1
3
5
10
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
r
th
- t
w
TRANSIENT THERMAL RESISTANCE
r
th
( C/W)
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA. COMMON
EMITTER(SINGLE NONREPETITIVE PULSE)
(1) NO HEAT SINK
(2) INFINITE HEAT SINK (Tc=25 C)
(1)
SAFE OPERATING AREA
20
COLLECTOR CURRENT I
C
(A)
10
5
3
I
C
MAX.(PULSED)
S
0
µ
10
S
S
1m
0m
N
10
IO
AT
mS
ER 5 C
10
OPc=2
DC T
100
10
I
C
MAX.
(CONTINUOUS)
1
0.5
0.3
(2)
1
0.1
0.001
0.01
0.1
1
10
100
1k
0.1
0.05
0.02
1
PULSE WIDTH t
w
(S)
3
10
30
100
V
CEO
MAX.
SINGLE NONREPETIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
200
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2007. 5. 22
Revision No : 3
2/2
Analogue and Mixed Signal
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