FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
January 2009
QFET
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
TM
Features
•
•
•
•
•
•
•
8A, 800V, R
DS(on)
= 1.55Ω @V
GS
= 10 V
Low gate charge ( typical 35 nC)
Low Crss ( typical 13 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS
Compliant
!
●
D
G
!
G DS
◀
●
●
▲
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQP8N80C
800
8
5.1
32
FQPF8N80C
8*
5.1 *
32 *
±
30
850
8
17.8
4.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
178
1.43
-55 to +150
300
59
0.48
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θJC
R
θJS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP8N80C
0.7
0.5
62.5
FQPF8N80C
2.1
--
62.5
Units
°C/W
°C/W
°C/W
©2009 Fairchild Semiconductor Corporation
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 800 V, V
GS
= 0 V
V
DS
= 640 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
800
--
--
--
--
--
--
0.5
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
R
DS(on)
g
FS
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 4 A
V
DS
= 50 V, I
D
= 4 A
(Note 4)
3.0
--
--
--
1.29
5.6
5.0
1.55
--
V
Ω
S
Dynamic Characteristics
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1580
135
13
2050
175
17
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 640 V, I
D
= 8 A,
V
GS
= 10 V
(Note 4, 5)
V
DD
= 400 V, I
D
= 8 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
40
110
65
70
35
10
14
90
230
140
150
45
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 8 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 8 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
690
8.2
8
32
1.4
--
--
A
A
V
ns
µC
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
8A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Typical Characteristics
10
1
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
150 C
o
o
10
0
25 C
0
-55 C
o
10
10
-1
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25℃
※
Notes :
1. V
DS
= 50V
2. 250μ s Pulse Test
10
-1
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.0
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
2.5
10
1
V
GS
= 10V
2.0
V
GS
= 20V
I
DR
, Reverse Drain Current [A]
10
0
1.5
150℃
25℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
※
Note : T
J
= 25℃
1.0
0
4
8
12
16
20
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
2500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
DS
= 160V
10
2000
C
iss
V
DS
= 400V
V
DS
= 640V
V
GS
, Gate-Source Voltage [V]
8
Capacitance [pF]
1500
C
oss
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
6
1000
4
500
C
rss
2
※
Note : I
D
= 8A
0
-1
10
10
0
10
1
0
0
10
20
30
40
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 4.0 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
10
2
Operation in This Area
is Limited by R
DS(on)
10
µ
s
100
µ
s
1 ms
10 ms
DC
10
2
Operation in This Area
is Limited by R
DS(on)
10
µ
s
100
µ
s
1 ms
10 ms
10
0
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
1
10
1
10
0
DC
10
-1
※
Notes :
2. T
J
= 150 C
3. Single Pulse
1. T
C
= 25 C
o
o
10
-1
※
Notes :
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
0
1
2
3
o
10
-2
10
0
10
1
10
2
10
3
10
-2
10
10
10
10
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP8N80C
Figure 9-2. Maximum Safe Operating Area
for FQPF8N80C
10
8
I
D
, Drain Current [A]
6
4
2
0
25
50
75
100
125
150
T
C
, Case Temperature [
℃
]
Figure 10. Maximum Drain Current
vs Case Temperature
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET
Typical Characteristics
(Continued)
10
0
(t), T h e r m a l R e s p o n s e
D = 0 .5
0 .2
10
-1
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u l s e
※
N o te s :
1 . Z
θ
J C
( t) = 0 .7
℃
/W M a x .
2 . D u t y F a c t o r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t)
Z
θ
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP8N80C
(t), T h e r m a l R e s p o n s e
10
0
D = 0 .5
0 .2
0 .1
※
N o te s :
1 . Z
θ
J C
(t) = 2 .1
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
(t)
10
-1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
Z
θ
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF8N80C
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
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