CNX72AX
CNX72A
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead forms : -
- STD
-
G form
-
SMD approved to CECC 00802
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Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96101299
Fimko - Registration No. 190469-01..22
Semko - Reference No. 9620076 01
Demko - Reference No. 305567
DESCRIPTION
The CNX72A of optically coupled isolator
consists of an infrared light emitting diode and
a NPN silicon photo transistor in a standard 6
pin dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Current Transfer Ratio (40% min)
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Low Saturation Voltage suitable for TTL
integrated circuits
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
2.54
7.0
6.0
1.2
7.62
6.62
Dimensions in mm
1
2
3
6
5
4
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
0.5
3.35
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BV
CBO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
30V
70V
6V
160mW
60mA
6V
105mW
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92235m-AAS/A1
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
Collector-base Breakdown (BV
CBO
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (I
C
/ I
F
)
(Note 2)
Collector-emitter Saturation VoltageV
CE (SAT)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Turn-on Time
Turn-off Time
t
on
t
off
5300
7500
5x10
10
26
25
MIN TYP MAX UNITS
1.2
6
10
30
70
6
50
1.5
V
V
µ
A
V
V
V
nA
TEST CONDITION
I
F
= 10mA
I
R
= 10
µ
A
V
R
= 6V
I
C
= 1mA
I
C
= 100
µ
A
I
E
= 100
µ
A
V
CE
= 10V
10mA I
F
, 0.4V V
CE
V
V
RMS
V
PK
Ω
µ
s
µ
s
Output
Coupled
0.4
1.6
0.4
10mA I
F
, 4mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 5V , I
C
= 2mA ,
R
L
= 1k
Ω,
R
ΒΕ= 5
6k
Ω
V
CC
= 5V , I
C
= 2mA ,
R
L
= 1k
Ω,
R
ΒΕ= 56
k
Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
DB92235m-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Collector-emitter Voltage
50
T
A
= 25°C
50
30
20
15
20
10
0
10
I
F
= 5mA
150
Collector current I
C
(mA)
40
30
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
(V)
Forward Current vs. Ambient Temperature
80
70
Forward current I
F
(mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Relative current transfer ratio
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Forward Current
2.8
Relative current transfer ratio
I
F
= 10mA
I
C
= 4mA
I
F
= 10mA
V
CE
= 0.4V
Collector-emitter saturation voltage V
CE(SAT)
2.4
2.0
1.6
1.2
0.8
0.4
0
1
2
V
CE
= 0.4V
T
A
= 25°C
5
10
20
50
1.0
0.5
0
-30
0
25
50
75
Ambient temperature T
A
( °C )
100
Forward current I
F
(mA)
DB92235m-AAS/A1
7/12/00