BY268, BY269
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
APPLICATIONS
• High voltage fast rectification diode
949539
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
PARTS TABLE
PART
BY268
BY269
TYPE DIFFERENTIATION
V
R
= 1400 V; I
FAV
= 0.8 A
V
R
= 1600 V; I
FAV
= 0.8 A
PACKAGE
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Peak reverse voltage, non repetitive
Reverse voltage
Peak forward surge current
Average forward current
Non repetitive reverse avalanche
energy
Junction and storage temperature
range
I
(BR)R
= 0.4 A
See electrical characteristics
t
p
= 10 ms, half sine wave
TEST CONDITION
PART
BY268
BY269
BY268
BY269
SYMBOL
V
RSM
V
RSM
V
R
V
R
I
FSM
I
FAV
E
R
T
j
= T
stg
VALUE
1600
1800
1400
1600
20
0.8
10
- 55 to + 175
UNIT
V
V
V
V
A
A
mJ
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
Document Number: 86005
Rev. 1.7, 25-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
105
BY268, BY269
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
I
F
= 0.4 A
V
R
= 1400 V
Reverse current
V
R
= 1600 V
V
R
= 1400 V, T
j
= 100 °C
V
R
= 1600 V, T
j
= 100 °C
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
BY268
BY269
BY268
BY269
PART
SYMBOL
V
F
I
R
I
R
I
R
I
R
t
rr
MIN.
-
-
-
-
-
-
TYP.
-
1
1
-
-
-
MAX.
1.25
2
2
15
15
400
UNIT
V
μA
μA
μA
μA
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25
C,
unless otherwise specified)
R
thJA
- Thermal Resist. Junction/Ambeint (K/W)
120
0.9
I
FAV
- Average Forward Current (A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
V
R
= V
RRM
half
sinewave
20
40
60
R
thJA
= 100 K/W
PCB: d = 25 mm
100
80
60
l
40
20
0
0
5
10
15
T
L
= constant
20
25
30
l
R
thJA
= 45 K/W
I = 10 mm
80 100 120 140 160 180
949090
I - Lead Length (mm)
16413
T
amb
- Ambient Temperature (°C)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
10
1000
V
R
= V
RRM
1
T
j
= 175 °C
T
j
= 25 °C
0.1
I
R
- Reverse Current (μA)
2.0
2.5
I
F
- Forward Current (A)
100
10
0.01
0.001
0
16412
0.5
1.0
1.5
1
25
16414
50
75
100
125
150
175
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Current vs. Junction Temperature
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106
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86005
Rev. 1.7, 25-Aug-10
BY268, BY269
Fast Avalanche Sinterglass Diode
Vishay Semiconductors
P
R
- Reverse Power Dissipation (mW)
900
35
V
R
= V
RRM
f = 1 MHz
700
600
500
400
300
200
100
0
25
50
75
100
125
150
175
P
R
-Limit
at 80 % V
R
P
R
-Limit
at 100 % V
R
C
D
- Diode Capacitance (pF)
800
30
25
20
15
10
5
0
0.1
1
10
100
16415
T
j
- Junction Temperature (°C)
16416
V
R
- Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Document Number: 86005
Rev. 1.7, 25-Aug-10
3.6 (0.142) max.
20543
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
107
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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