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EDI88128C85CM

Description
Standard SRAM, 128KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
Categorystorage    storage   
File Size387KB,8 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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EDI88128C85CM Overview

Standard SRAM, 128KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32

EDI88128C85CM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
Reach Compliance Codeunknown
Maximum access time85 ns
Other featuresAUTOMATIC POWER-DOWN
I/O typeCOMMON
JESD-30 codeR-CDIP-T32
length40.64 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height3.937 mm
Maximum standby current0.005 A
Minimum standby current4.5 V
Maximum slew rate0.095 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width15.24 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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