WS512K32-85HQE datasheet, PDF - EEWORLD Datasheet

WS512K32-85HQE: DescriptionSRAM Module, 2MX8, 85ns, CMOS, CPGA66, 1.185 X 1.185 INCH, HERMETIC SEALED, CERAMIC, HIP-66; Categorystorage storage; File Size325KB，12 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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WS512K32-85HQE Overview

SRAM Module, 2MX8, 85ns, CMOS, CPGA66, 1.185 X 1.185 INCH, HERMETIC SEALED, CERAMIC, HIP-66

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	1.185 X 1.185 INCH, HERMETIC SEALED, CERAMIC, HIP-66
Reach Compliance Code	unknown
Maximum access time	85 ns
Other features	CONFIGURABLE AS 512K X 32 OR 1024K X 16
JESD-30 code	S-CPGA-P66
JESD-609 code	e4
length	30.1 mm
memory density	16777216 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	66
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	2MX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	PGA
Package shape	SQUARE
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	6.22 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	PIN/PEG
Terminal pitch	2.54 mm
Terminal location	PERPENDICULAR
Maximum time at peak reflow temperature	NOT SPECIFIED
width	30.1 mm

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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