POWER, FET, TO-252
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Vishay |
Parts packaging code | TO-252 |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Contacts | 3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Other features | AVALANCHE RATED |
Avalanche Energy Efficiency Rating (Eas) | 310 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 200 V |
Maximum drain current (Abs) (ID) | 3.6 A |
Maximum drain current (ID) | 3.6 A |
Maximum drain-source on-resistance | 1.5 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-252 |
JESD-30 code | R-PSSO-G2 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 240 |
Polarity/channel type | P-CHANNEL |
Maximum power dissipation(Abs) | 42 W |
Maximum pulsed drain current (IDM) | 14 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |