SIHFR430AT-E3A datasheet, PDF - EEWORLD Datasheet

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SIHFR430AT-E3A: Description5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; Categorysemiconductor Discrete semiconductor; File Size3MB，7 Pages; ManufacturerKersemi Electronic; Websitehttp://www.kersemi.com

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SIHFR430AT-E3A Overview

5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

SIHFR430AT-E3A Parametric

Parameter Name	Attribute value
Number of terminals	2
Minimum breakdown voltage	500 V
Processing package description	ROHS COMPLIANT, DPAK-3
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	5 A
Rated avalanche energy	130 mJ
Maximum drain on-resistance	1.7 ohm
Maximum leakage current pulse	20 A

SIHFR430AT-E3A Related Products

	SIHFR430AT-E3A	IRFR430APBF	IRFR430ATRA	IRFR430ATRRA	IRFR430ATRRPBFA	IRFU430A	SIHFR430ATL-E3A	SIHFR430ATLA
Description	5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Number of terminals	2	2	2	2	2	2	2	2
Minimum breakdown voltage	500 V	500 V	500 V	500 V	500 V	500 V	500 V	500 V
Processing package description	ROHS COMPLIANT, DPAK-3	ROHS COMPLIANT, DPAK-3	ROHS COMPLIANT, DPAK-3	ROHS COMPLIANT, DPAK-3	ROHS COMPLIANT, DPAK-3	ROHS COMPLIANT, DPAK-3	ROHS COMPLIANT, DPAK-3	ROHS COMPLIANT, DPAK-3
Lead-free	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
terminal coating	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Number of components	1	1	1	1	1	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Maximum leakage current	5 A	5 A	5 A	5 A	5 A	5 A	5 A	5 A
Rated avalanche energy	130 mJ	130 mJ	130 mJ	130 mJ	130 mJ	130 mJ	130 mJ	130 mJ
Maximum drain on-resistance	1.7 ohm	1.7 ohm	1.7 ohm	1.7 ohm	1.7 ohm	1.7 ohm	1.7 ohm	1.7 ohm
Maximum leakage current pulse	20 A	20 A	20 A	20 A	20 A	20 A	20 A	20 A

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