3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Vishay |
| Parts packaging code | TO-252 |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 160 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 400 V |
| Maximum drain current (Abs) (ID) | 3.1 A |
| Maximum drain current (ID) | 3.1 A |
| Maximum drain-source on-resistance | 1.8 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252 |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 240 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 42 W |
| Maximum pulsed drain current (IDM) | 12 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| SIHFR320T | SIHFR320 | SIHFR320-E3 | SIHFR320T-E3 | SIHFR320TL | SIHFR320TL-E3 | SIHFR320TR | SIHFR320TR-E3 | SIHFU320 | SIHFU320-E3 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| Is it lead-free? | Contains lead | Contains lead | Lead free | Lead free | Contains lead | Lead free | Contains lead | Lead free | Contains lead | Lead free |
| Is it Rohs certified? | incompatible | incompatible | conform to | conform to | incompatible | conform to | incompatible | conform to | incompatible | conform to |
| Parts packaging code | TO-252 | TO-252 | TO-252 | TO-252 | TO-252 | TO-252 | TO-252 | TO-252 | TO-251 | TO-251 |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 |
| Contacts | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
| Other features | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 160 mJ | 160 mJ | 160 mJ | 160 mJ | 160 mJ | 160 mJ | 160 mJ | 160 mJ | 160 mJ | 160 mJ |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 400 V | 400 V | 400 V | 400 V | 400 V | 400 V | 400 V | 400 V | 400 V | 400 V |
| Maximum drain current (Abs) (ID) | 3.1 A | 3.1 A | 3.1 A | 3.1 A | 3.1 A | 3.1 A | 3.1 A | 3.1 A | 3.1 A | 3.1 A |
| Maximum drain current (ID) | 3.1 A | 3.1 A | 3.1 A | 3.1 A | 3.1 A | 3.1 A | 3.1 A | 3.1 A | 3.1 A | 3.1 A |
| Maximum drain-source on-resistance | 1.8 Ω | 1.8 Ω | 1.8 Ω | 1.8 Ω | 1.8 Ω | 1.8 Ω | 1.8 Ω | 1.8 Ω | 1.8 Ω | 1.8 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252 | TO-252 | TO-252 | TO-252 | TO-252 | TO-252 | TO-252 | TO-252 | TO-251 | TO-251 |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | R-PSIP-T3 |
| JESD-609 code | e0 | e0 | e3 | e3 | e0 | e3 | e0 | e3 | e0 | e3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | IN-LINE |
| Peak Reflow Temperature (Celsius) | 240 | 240 | 260 | 260 | 240 | 260 | 240 | 260 | 240 | 260 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 42 W | 42 W | 42 W | 42 W | 42 W | 42 W | 42 W | 42 W | 42 W | 42 W |
| Maximum pulsed drain current (IDM) | 12 A | 12 A | 12 A | 12 A | 12 A | 12 A | 12 A | 12 A | 12 A | 12 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES | YES | YES | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | 30 | 30 | 40 | 40 | 30 | 40 | 30 | 40 | 30 | 40 |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maker | Vishay | Vishay | Vishay | Vishay | Vishay | Vishay | Vishay | Vishay | Vishay | - |
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