4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Vishay |
| Parts packaging code | TO-252AA |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 75 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 4.3 A |
| Maximum drain current (ID) | 4.3 A |
| Maximum drain-source on-resistance | 0.54 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252AA |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 25 W |
| Maximum pulsed drain current (IDM) | 17 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| SIHFR110TL-E3 | SIHFR110 | SIHFR110-E3 | SIHFR110T | SIHFR110T-E3 | SIHFR110TL | SIHFR110TR-E3 | SIHFU110 | SIHFU110-E3 | IRFR110TRR | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | 4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | MOSFET N-CH 100V 4.3A DPAK |
| Is it Rohs certified? | conform to | incompatible | conform to | incompatible | conform to | incompatible | conform to | incompatible | conform to | incompatible |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 75 mJ | 75 mJ | 75 mJ | 75 mJ | 75 mJ | 75 mJ | 75 mJ | 75 mJ | 75 mJ | 100 mJ |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE |
| Minimum drain-source breakdown voltage | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Maximum drain current (Abs) (ID) | 4.3 A | 4.3 A | 4.3 A | 4.3 A | 4.3 A | 4.3 A | 4.3 A | 4.3 A | 4.3 A | 4.3 A |
| Maximum drain current (ID) | 4.3 A | 4.3 A | 4.3 A | 4.3 A | 4.3 A | 4.3 A | 4.3 A | 4.3 A | 4.3 A | 4.3 A |
| Maximum drain-source on-resistance | 0.54 Ω | 0.54 Ω | 0.54 Ω | 0.54 Ω | 0.54 Ω | 0.54 Ω | 0.54 Ω | 0.54 Ω | 0.54 Ω | 0.54 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-251 | TO-251 | TO-252AA |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | R-PSIP-T3 | R-PSSO-G2 |
| JESD-609 code | e3 | e0 | e3 | e0 | e3 | e0 | e3 | e0 | e3 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 3 | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | IN-LINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 240 | 260 | 240 | 260 | 240 | 260 | 240 | 260 | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 25 W | 25 W | 25 W | 25 W | 25 W | 25 W | 25 W | 25 W | 25 W | 25 W |
| Maximum pulsed drain current (IDM) | 17 A | 17 A | 17 A | 17 A | 17 A | 17 A | 17 A | 17 A | 17 A | 17 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES | YES | NO | NO | YES |
| Terminal surface | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | TIN LEAD |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | 40 | 30 | 40 | 30 | 40 | 30 | 40 | 30 | 40 | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Is it lead-free? | Lead free | Contains lead | Lead free | Contains lead | Lead free | Contains lead | Lead free | Contains lead | Lead free | - |
| Parts packaging code | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-251 | TO-251 | - |
| Contacts | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | - |
| Other features | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | - |
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