IRFB11N50A, SiHFB11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
52
13
18
Single
D
FEATURES
500
0.52
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully
Characterized
Capacitance
and
Avalanche Voltage and current
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TO-220
G
APPLICABLE OFF LINE SMPS TOPOLOGIES
S
G
D
S
N-Channel
MOSFET
• Two Transistor Forward
• Half and Full Bridge
• Power Factor Correction Boost
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFB11N50APbF
SiHFB11N50A-E3
IRFB11N50A
SiHFB11N50A
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery
dV/dt
c
for 10 s
6-32 or M3 screw
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
11
7.0
44
1.3
275
11
17
170
6.9
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 4.5 mH, R
G
= 25
Ω,
I
AS
= 11 A (see fig. 12).
c. I
SD
≤
11 A, dI/dt
≤
140 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91094
S-81243-Rev. B, 21-Jul-08
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IRFB11N50A, SiHFB11N50A
Vishay Siliconix
THERMAL RESISTANCE
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
0.75
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
I
D
= 6.6 A
b
V
DS
= 50 V, I
D
= 6.6 A
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V
V
DS
= 400 V, f = 1.0 MHz
V
DS
= 0 V to 400 V
I
D
= 11 A, V
DS
= 400 V
see fig. 6 and 13
b
500
2.0
-
-
-
-
6.1
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.52
-
V
V
nA
µA
Ω
S
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V
-
-
-
-
-
-
-
-
-
-
1423
208
8.1
2000
55
97
-
-
-
14
35
32
28
-
-
-
-
-
-
52
13
18
-
-
-
-
ns
nC
pF
V
DD
= 250 V, I
D
= 11 A
R
G
= 9.1
Ω,
R
D
= 22
Ω,
see fig. 10
b
-
-
-
-
-
-
-
-
-
-
-
510
3.4
11
A
44
1.5
770
5.1
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 11 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 11 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. C
oss
effective is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
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Document Number: 91094
S-81243-Rev. B, 21-Jul-08
IRFB11N50A, SiHFB11N50A
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
10
T
J
= 150
°
C
T
J
= 25
°
C
1
1
0.1
0.1
4.5V
20µs PULSE
WIDTH
T
J
= 25
°
C
1
10
100
0.1
4.0
V
DS = 50V
20µs PULSE
WIDTH
5.0
6.0
7.0
8.0
9.0
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics
V
GS
, Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
100
TOP
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
3.0
I
D
= 11A
2.5
2.0
10
1.5
1.0
0.5
4.5V
1
1
10
20µs PULSE
WIDTH
T
J
= 150
°
C
100
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80
100 120 140 160
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91094
S-81243-Rev. B, 21-Jul-08
www.vishay.com
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IRFB11N50A, SiHFB11N50A
Vishay Siliconix
2400
2000
C, Capacitance (pF)
iss
1600
I
SD
, Reverse Drain Current (A)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
100
10
oss
1200
T
J
= 150
°
C
800
1
T
J
= 25
°
C
rss
400
0
1
10
100
1000
A
0.1
0.0
V
GS
= 0
V
0.4
0.8
1.2
1.6
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
,Source-to-Drain
Voltage
(V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I
D
= 6.6A
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
1000
V
GS
, Gate-to-Source
Voltage
(V)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
16
I
D
, Drain Current (A)
100
10us
10
100us
1ms
1
10ms
12
8
4
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
50
0.1
T
C
= 25 ° C
T
J
= 150° C
Single Pulse
10
100
1000
10000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91094
S-81243-Rev. B, 21-Jul-08
IRFB11N50A, SiHFB11N50A
Vishay Siliconix
R
D
12
V
GS
V
DS
10
D.U.T.
+
R
G
I
D
, Drain Current (A)
-
V
DD
8
10V
Pulse
Width
≤
1
µs
Duty Factor
≤
0.1
%
6
Fig. 10a - Switching Time Test Circuit
4
V
DS
2
90
%
0
25
50
75
100
125
150
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
T
C
, Case Temperature ( ° C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
15
V
t
p
V
DS
L
Driver
R
G
20
V
t
p
D.U.T.
I
AS
0.01
Ω
+
A
-
V
DD
A
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91094
S-81243-Rev. B, 21-Jul-08
Fig. 12b - Unclamped Inductive Waveforms
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