SIHF840ASTR datasheet, PDF - EEWORLD Datasheet

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SIHF840ASTR: Description8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA; CategoryDiscrete semiconductor The transistor; File Size214KB，10 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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SIHF840ASTR Overview

8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA

SIHF840ASTR Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknow
Avalanche Energy Efficiency Rating (Eas)	510 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	8 A
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	32 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IRF840AS, SiHF840AS, IRF840AL, SiHF840AL

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

9.0

Single

FEATURES

500

0.85

PAK

(TO-262)

PAK (TO-263)

•

Halogen-free According to IEC 61249-2-21

Definition

• Low Gate Charge Q

Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully

Characterized

Capacitance

and

Avalanche Voltage and Current

• Effective C

oss

Specified

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

N-Channel MOSFET

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge

• Full Bridge

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

PAK (TO-263)

SiHF840AS-GE3

IRF840ASPbF

SiHF840AS-E3

PAK (TO-263)

SiHF840ASTRL-GE3

IRF840ASTRLPbF

SiHF840ASTL-E3

PAK (TO-263)

SiHF840ASTRR-GE3

IRF840ASTRRPbF

SiHF840ASTR-E3

PAK (TO-262)

SiHF840AL-GE3

IRF840ALPbF

SiHF840AL-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche

Repetitive Avalanche

Energy

= 25 °C

dV/dt

, T

stg

for 10 s

Current

at 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

500

± 30

8.0

5.1

1.0

510

8.0

125

3.1

5.0

- 55 to + 150

300

W/°C

V/ns

°C

UNIT

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

c, e

Operating Junction and Storage Temperature Range

Soldering Temperature

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 16 mH, R

= 25

,

= 8.0 A (see fig. 12).

c. I



8.0 A, dI/dt



100 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. Uses IRF840A, SiH840A data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91066

S11-1050-Rev. D, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHF840ASTR Related Products

	SIHF840ASTR	SIHF840AL	SIHF840AL-E3	SIHF840AS	SIHF840AS-E3	SIHF840ASTL	SIHF840ASTL-E3	SIHF840ASTR-E3
Description	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Is it lead-free?	Contains lead	Contains lead	Lead free	Contains lead	Lead free	Contains lead	Lead free	Lead free
Is it Rohs certified?	incompatible	incompatible	conform to	incompatible	conform to	incompatible	conform to	conform to
Parts packaging code	D2PAK	TO-262AA	TO-262AA	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	4	3	3	4	4	4	4	4
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Avalanche Energy Efficiency Rating (Eas)	510 mJ	510 mJ	510 mJ	510 mJ	510 mJ	510 mJ	510 mJ	510 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V	500 V	500 V	500 V	500 V	500 V	500 V
Maximum drain current (Abs) (ID)	8 A	8 A	8 A	8 A	8 A	8 A	8 A	8 A
Maximum drain current (ID)	8 A	8 A	8 A	8 A	8 A	8 A	8 A	8 A
Maximum drain-source on-resistance	0.85 Ω	0.85 Ω	0.85 Ω	0.85 Ω	0.85 Ω	0.85 Ω	0.85 Ω	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-262AA	TO-262AA	TO-263AB	TO-263AB	TO-263AB	TO-263AB	TO-263AB
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e0	e0	e3	e0	e3	e0	e3	e3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	2	3	3	2	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240	240	260	240	260	240	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	125 W	125 W	125 W	125 W	125 W	125 W	125 W	125 W
Maximum pulsed drain current (IDM)	32 A	32 A	32 A	32 A	32 A	32 A	32 A	32 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	YES	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	40	30	40	30	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Shell connection	DRAIN	-	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Base Number Matches	1	-	-	1	1	1	1	1

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