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PDTC114YS

Description
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size98KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PDTC114YS Overview

100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

PDTC114YS Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 4.7
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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PDTC114YS PDTC114Y PDTC114YE PDTC114YEF PDTC114YK PDTC114YM PDTC114YT PDTC114YU
Description 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
surface mount NO Yes YES YES YES YES YES YES
Terminal form THROUGH-HOLE GULL WING GULL WING FLAT GULL WING NO LEAD GULL WING GULL WING
Terminal location BOTTOM DUAL DUAL DUAL DUAL BOTTOM DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Is it Rohs certified? conform to - conform to conform to conform to conform to conform to conform to
Parts packaging code TO-92 - SC-75 SC-89 SOT-23 SC-101 SOT-23 SC-70
package instruction CYLINDRICAL, O-PBCY-T3 - PLASTIC, SC-75, 3 PIN PLASTIC, SC-89, 3 PIN PLASTIC, SC-59A, 3 PIN 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, PLASTIC, SC-101, 3 PIN PLASTIC PACKAGE-3 PLASTIC, SC-70, 3 PIN
Contacts 3 - 3 3 3 3 3 3
Reach Compliance Code unknow - compli unknow unknow compli compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT IN BIAS RESISTANCE RATIO IS 4.7 - BUILT IN BIAS RESISTANCE RATIO IS 4.7 BUILT IN BIAS RESISTANCE RATIO IS 4.7 BUILT IN BIAS RESISTANCE RATIO IS 4.7 BUILT IN BIAS RESISTANCE RATIO IS 4.7 BUILT IN BIAS RESISTANCE RATIO IS 4.7 BUILT IN BIAS RESISTANCE RATIO IS 4.7
Maximum collector current (IC) 0.1 A - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V - 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 - 100 100 100 100 100 100
JESD-30 code O-PBCY-T3 - R-PDSO-G3 R-PDSO-F3 R-PDSO-G3 R-PBCC-N3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 - e3 e3 e3 e3 e3 e3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CYLINDRICAL - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE CHIP CARRIER SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - 260 NOT SPECIFIED 260 260 260 260
Polarity/channel type NPN - NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.5 W - 0.15 W 0.25 W 0.25 W 0.25 W 0.25 W 0.2 W
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Terminal surface Matte Tin (Sn) - Tin (Sn) Tin (Sn) Matte Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Maximum time at peak reflow temperature NOT SPECIFIED - 30 NOT SPECIFIED 40 30 30 30

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