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L2TVS64A

Description
Trans Voltage Suppressor Diode, 200W, 64V V(RWM), Unidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size190KB,5 Pages
ManufacturerGood-Ark
Environmental Compliance
Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.
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L2TVS64A Overview

Trans Voltage Suppressor Diode, 200W, 64V V(RWM), Unidirectional, 1 Element, Silicon,

L2TVS64A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGood-Ark
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Maximum breakdown voltage78.6 V
Minimum breakdown voltage71.1 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-F2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation200 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Maximum repetitive peak reverse voltage64 V
surface mountYES
technologyAVALANCHE
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

L2TVS64A Preview

Download Datasheet
L2TVS10.0A thru L2TVS190A
Surface Mount Transient Voltage Suppressors
Peak Pulse Power 200W Stand-off Voltage 10.0 to 190V
Features
Glass passivated junction
Moisture sensitivity: level 1, per J-STD-020
Solder dip 260 °C 10 s
C,
Low profile, typical thickness 1.0mm
Polarity:Uni-directional
Excellent clamping capability and Fast response time
200W peak pulse power capability with a 10/1000us waveform
eSGB (SMAF)
Typical Applications
yp
pp
Use in sensitive electronics protection against voltage transients induced by inductive load
switching and lighting on Ics,MOSFET,signal lines of sensor units for consumer, computer,
industrial and telecommunication
Maximum Ratings
Parameter
Peak power dissipation with a
10/1000us waveform
Peak pulse current with a
10/1000us waveform
Steady state power dissipation on
infinite heatsink
Peak forward surge current,8.3ms
single half sine-wave uni-
Maximum instantaneous forward
voltage at 25A
Thermal resistance junction to
ambient air
Operating junction and storage
temperature range
Notes:
(TA = 25 °C unless otherwise noted)
Symbol
P
PPM
1)
Value
Minimum 200
See Next Table
0.5
30.0
3.5
80
-65 to +150
Unit
W
A
W
A
V
℃/W
I
PPM1)
P
M(AV)2)
I
FSM
V
F
Rthja
TJ, TSTG
1) Non-repetitive current,per fig.3 and derated above TA=25℃ per fig.4.
2) Power dissipation mounted on recommended pad layout
3) Thermal resistance from junction to ambient mounted on PCB with 8 0×8 0mm copper pads
ambient,mounted
8.0×8.0mm
www.goodark.com
1/5
2014.04-Rev.A
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