SPP80N04S2-04 datasheet, PDF - EEWORLD Datasheet

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SPP80N04S2-04: DescriptionOptiMOS Power-Transistor; CategoryDiscrete semiconductor The transistor; File Size270KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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SPP80N04S2-04 Overview

OptiMOS Power-Transistor

SPP80N04S2-04 Parametric

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	810 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (Abs) (ID)	80 A
Maximum drain current (ID)	80 A
Maximum drain-source on-resistance	0.0037 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	300 W
Maximum pulsed drain current (IDM)	320 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON

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SPI80N04S2-04

SPP80N04S2-04,SPB80N04S2-04

OptiMOS



Power-Transistor

Feature

•

N-Channel

Product Summary

DS(on)

max. SMD version

P- TO262 -3-1

P- TO263 -3-2

3.4

P- TO220 -3-1

mΩ

•

Enhancement mode

•

175°C operating temperature

•

Avalanche rated

•

rated

Type

SPP80N04S2-04

SPB80N04S2-04

SPI80N04S2-04

Package

Ordering Code

Marking

2N0404

Value

Unit

P- TO220 -3-1 Q67040-S4260

P- TO263 -3-2 Q67040-S4257

P- TO262 -3-1 Q67060-S6173

Maximum Ratings,

= 25 °C, unless otherwise specified

Symbol

Parameter

Continuous drain current

=25°C

=100°C

Pulsed drain current

=25°C

D puls

dv/dt

tot

j ,

stg

320

810

±20

300

-55... +175

55/175/56

kV/µs

°C

Avalanche energy, single pulse

=80A,

=25V,

=25

Ω

Repetitive avalanche energy, limited by

jmax

Reverse diode dv/dt

=80A,

=32V,

di/dt

=200A/µs,

jmax

=175°C

Gate source voltage

Power dissipation

=25°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Page 1

2004-05-24

SPP80N04S2-04 Related Products

	SPP80N04S2-04	SPI80N04S2-04	SPB80N04S2-04
Description	OptiMOS Power-Transistor	OptiMOS Power-Transistor	OptiMOS Power-Transistor
Maker	Infineon	Infineon	Infineon
Parts packaging code	TO-220AB	TO-262AA	D2PAK
package instruction	FLANGE MOUNT, R-PSFM-T3	IN-LINE, R-PSIP-T3	PLASTIC, TO-263, 3 PIN
Contacts	3	3	4
Reach Compliance Code	unknow	unknow	_compli
ECCN code	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	810 mJ	810 mJ	810 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V	40 V	40 V
Maximum drain current (Abs) (ID)	80 A	80 A	80 A
Maximum drain current (ID)	80 A	80 A	80 A
Maximum drain-source on-resistance	0.0037 Ω	0.0037 Ω	0.0034 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-262AA	TO-263AB
JESD-30 code	R-PSFM-T3	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e3	e3	e0
Number of components	1	1	1
Number of terminals	3	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	IN-LINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	300 W	300 W	300 W
Maximum pulsed drain current (IDM)	320 A	320 A	320 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES
Terminal surface	MATTE TIN	MATTE TIN	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON

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