SPP80N10L datasheet, PDF - EEWORLD Datasheet

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SPP80N10L: DescriptionSIPMOS Power-Transistor; CategoryDiscrete semiconductor The transistor; File Size124KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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SPP80N10L Overview

SIPMOS Power-Transistor

SPP80N10L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	700 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	80 A
Maximum drain current (ID)	80 A
Maximum drain-source on-resistance	0.024 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	250 W
Maximum pulsed drain current (IDM)	320 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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SPI80N10L

SPP80N10L

SIPMOS



Power-Transistor

Feature

N-Channel

Enhancement mode

Logic Level

175°C operating temperature

Avalanche rated

dv/dt rated

Product Summary

DS(on)

PG-TO262-3-1

100

PG-TO220-3-1

Type

SPP80N10L

SPI80N10L

Package

PG-TO220-3-1

PG-TO262-3-1

Ordering Code

Q67042-S4173

Q67042-S4172

Marking

80N10L

Maximum Ratings,

= 25 °C, unless otherwise specified

Parameter

Continuous drain current

=25°C

=100°C

Symbol

Value

Unit

Pulsed drain current

=25°C

D puls

dv/dt

tot

j ,

stg

320

700

±20

250

-55... +175

55/175/56

kV/µs

°C

Avalanche energy, single pulse

Avalanche energy, periodic limited by

jmax

Reverse diode dv/dt

=80A,

=0V,

di/dt=200A/µs

Gate source voltage

Power dissipation

=25°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Rev. 2.1

Page 1

=80 A ,

=25V,

=25

2005-02-15

SPP80N10L Related Products

	SPP80N10L	SPI80N10L	SPB80N10L
Description	SIPMOS Power-Transistor	SIPMOS Power-Transistor	SIPMOS Power-Transistor
Is it Rohs certified?	conform to	conform to	incompatible
Maker	Infineon	Infineon	Infineon
Parts packaging code	TO-220AB	TO-262AA	D2PAK
package instruction	FLANGE MOUNT, R-PSFM-T3	IN-LINE, R-PSIP-T3	PLASTIC, TO-263, 3 PIN
Contacts	3	3	4
Reach Compliance Code	compliant	compliant	_compli
ECCN code	EAR99	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	700 mJ	700 mJ	700 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V
Maximum drain current (Abs) (ID)	80 A	80 A	80 A
Maximum drain current (ID)	80 A	80 A	80 A
Maximum drain-source on-resistance	0.024 Ω	0.024 Ω	0.024 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-262AA	TO-263AB
JESD-30 code	R-PSFM-T3	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e3	e3	e0
Number of components	1	1	1
Number of terminals	3	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	220
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	250 W	250 W	250 W
Maximum pulsed drain current (IDM)	320 A	320 A	320 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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