P4C422
P4C422
ULTRA HIGH SPEED 256 x 4
STATIC CMOS RAM
FEATURES
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25/35 ns (Commercial)
– 15/20/25 /35 ns (Military)
CMOS for Low Power
– 495 mW Max. – 10/12/15/20/25 (Commercial)
– 495 mW Max. – 15/20/25/35 (Military)
Single 5V
±
10% Power Supply
Separate I/O
Fully TTL Compatible Inputs and Outputs
Resistant to single event upset and latchup
resulting from advanced process and design
improvements
Standard 22-pin 400 mil DIP, 24-pin 300 mil
SOIC, 24-pin LCC package and 24-pin CERPACK
package
DESCRIPTION
The P4C422 is a 1,024-bit high-speed (10ns) Static RAM
with a 256 x 4 organization. The memory requires no
clocks or refreshing and has equal access and cycle
times. Inputs and outputs are fully TTL compatible.
Operation is from a single 5 Volt supply. Easy memory
expansion is provided by an active LOW chip select one
(CS
1
) and active HIGH chip select two (CS
2
) as well as 3-
state outputs.
In addition to very high performance and very high den-
sity, the device features latch-up protection, single event
and upset protection. The P4C422 is offered in several
packages: 22-pin 400 mil DIP (plastic and ceramic), 24-
pin 300 mil SOIC, 24-pin LCC and 24-pin CERPACK.
Devices are offered in both commercial and military
temperature ranges.
FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATIONS
CS
2
CS
1
A3
A2
A1
A0
A5
A6
A7
GND
D0
O0
D1
NC
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V CC
A4
WE
CS
1
OE
CS 2
O3
D3
O2
D2
O1
NC
D
0
D
1
D
2
D
3
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
DATA INPUT
CONTROL
WE
OE
32 X 32
ARRAY
ROW
DECODER
SENSE AMPS
O
0
O
1
O
2
O
3
A3
A2
A1
A0
A5
A6
A7
GND
D0
O0
D1
1
2
3
4
5
6
7
8
9
10
11
22
21
20
19
18
17
16
15
14
13
12
V CC
A4
WE
CS
1
OE
CS 2
O3
D3
O2
D2
O1
INDEX
A1 A2 A3 VCC A4 WE
3
4
5
6
7
8
9
10
D0
11
O0
12
13
14
2
1
24
23
22
21
20
19
18
17
16
15
A0
A5
NC
A6
A7
GND
CS1
OE
CS2
NC
O3
D3
D1 O1
D 2 O2
COLUMN
DECODER
SOIC (S4)
CERPACK (F3) SIMILAR
TOP VIEW
DIP (P3-1, D3-1)
TOP VIEW
LCC (L4)
TOP VIEW
Means Quality, Service and Speed
1Q97
1
P4C422
MAXIMUM RATINGS
(1)
Symbol
V
CC
Parameter
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
Value
– 0.5 to +7
– 0.5 to
V
CC
+0.5
– 55 to +125
Unit
V
Symbol
T
BIAS
T
STG
V
°C
I
OUT
Parameter
Temperature Under
Bias
Storage Temperature
DC Output Current
Value
– 55 to +125
– 65 to +150
20
Unit
°C
°C
mA
V
TERM
T
A
RECOMMENDED OPERATING CONDITIONS
Grade
(2)
Commercial
Military
Ambient Temp
0°C to 70°C
–55°C to 125°C
Gnd
0V
0V
Vcc
5.0V
±10%
5.0V
±10%
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Conditions Typ. Unit
V
IN
= 0V
5
7
pF
pF
Output Capacitance V
OUT
= 0V
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
P4C422
Symbol
V
OH
V
OL
V
IH
V
IL
V
CL
I
IX
I
OZ
I
OS
Parameter
Output High Voltage
Output Low Voltage
Input High Voltage
Input Low Voltage
Input Clamp Diode Voltage
Input Load Current
Output Current (High Z)
Output Short Circuit
Current
(3)
I
IN
= –10 mA
GND≤ V
IN
≤
V
CC
V
OL
≤
V
OUT
≤
V
OH
, Output Disabled
V
CC
= Max., V
OUT
= GND
–1.5
–10
–10
10
10
90
Test Conditions
I
OH
= –5.2 mA, V
CC
= Min.
I
OL
= +8 mA, V
CC
= Min.
2.1
0.8
Min
2.4
0.4
Max
Unit
V
V
V
V
V
µA
µA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
I
CC
Parameter
Dynamic Operating Current
Temperature
Range
Commercial
Military
-10
90
N/A
-12
90
N/A
-15
90
90
-20
90
90
-25
65
90
-35
65
90
Unit
mA
mA
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. For test purposes, not more than one output at a time should be
shorted. Short circuit test duration should not exceed 30 seconds.
4. This parameter is sampled and not 100% tested.
5. Transition time is
≤
3ns for 10, 12, and 15 ns products and
≤
5ns for
20, 25, and 35 ns products, see Fig 1d. Timing is referenced at input
and output levels of 1.5V. The output loading is equivalent to the
specified I
OL
/I
OH
with a load capacitance of 15 pF (10, 12) or 30 pF
(15, 20, 25, 35) as in Fig. 1a and 1b respectively.
6. Transition time is
≤
3ns for 10, 12, and 15 ns products and
≤
5ns for
20, 25, and 35 ns products, see Fig 1d. Transition is measured at
steady state HIGH level -500mV or steady state LOW level +500mV
on the output from a level on the input with load shown in Fig. 1c.
7. t
W
is measured at t
WSA
= min.: t
WSA
is measured at t
W
= min.
2
P4C422
FUNCTIONAL DESCRIPTION
An active LOW write enable (WE) controls the writing/
reading operation of the memory. When the chip select
one (CS
1
) and the write enable (WE) are LOW and the
chip select two (CS
2
) is HIGH, the information on data
inputs (D
0
through D
3
) is written into the addressed
memory word and preconditions the output circuitry so
that true data is present at the outputs when the write
cycle is complete. This preconditioning operation insures
minimum write recovery times by eliminating the “write
recovery glitch.” Reading is performed with chip selct one
(CS
1
) LOW, chip select two (CS
2
) HIGH, write enable
(WE) HIGH and output enable (OE) LOW. The informa-
tion stored in the addressed word is read out on the
noninverting outputs (O
0
through O
3
). The outputs of the
memory go to an inactive high impedance state whenever
chip select one (CS
1
) is HIGH, or during the write
operation when write enable (WE) is LOW.
TRUTH TABLE
Mode
Standby
Standby
D
OUT
Disabled
Read
Write
CS
2
CS
1
L
X
H
H
H
X
H
L
L
L
WE
X
X
X
H
L
OE
X
X
H
L
X
Output
High Z
High Z
High Z
D
OUT
High Z
Notes:
H = HIGH
L = Low
X = Don't Care
HIGH Z = Implies outputs are disabled or off. This
condition is defined as high impedance state
for the P4C422.
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC
= 5V
±
10% except as noted, All Temperature Ranges)
(2)
Sym.
t
RC
t
ACS
t
ZRCS
t
AOS
t
ZROS
t
AA
Parameter
Read Cycle Time
(5)
Chip Select Time
(5)
Chip Select to High-Z
(6)
Output Enable Time
Output Enable to High-Z
(6)
Address Access Time
(5)
-10*
-12
-15
-20
-25
-35
Min Max Min Max Min Max Min Max Min Max Min Max
12
7.5
8
7.5
8
10
12
8
10
8
10
12
15
8
12
8
12
15
20
12
15
12
15
20
25
15
20
15
20
25
35
25
30
25
30
35
Unit
ns
ns
ns
ns
ns
ns
*V
CC
= 5V
±
5%
TIMING WAVEFORM OF READ CYCLE
tRC
ADDRESS
A0–A7
CS
1
tAA
CS2
OE
WE
DATA
OUTPUTS
O0–O3
tAOS
tZROS
DATA VALID
tACS
tZRCS
3
P4C422
AC CHARACTERISTICS—WRITE CYCLE
(V
CC
= 5V
±
10% except as noted, All Temperature Ranges)
(2)
Sym.
t
WC
t
ZWS
t
WR
t
W
t
WSD
t
WHD
t
WSA
t
WHA
t
WSCS
t
WHCS
Parameter
Write Cycle Time
(5)
Write Enable to High-Z
(6)
Write Recovery Time
Write Pulse Width
(5,7)
Data Setup Time Prior to Write
(5)
Data Hold Time
(5)
Address Setup Time
(5,7)
Address Hold Time
(5)
Chip Select Setup Time
(5)
Chip Select Hold Time
(5)
8
-10*
10
8
8
9
0
2
0
2
0
2
12
-12
15
10
10
11
0
2
0
4
0
2
-15
-20
20
-25
25
35
20
20
15
5
5
5
5
5
5
20
5
5
5
5
5
5
-35
Unit
ns
Min Max Min Max Min Max Min Max Min Max Min Max
12
12
13
2
5
2
5
2
5
15
15
30
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
0
2
0
2
0
2
*V
CC
= 5V
±
5%
TIMING WAVEFORM OF WRITE CYCLE
ADDRESS
A0–A7
CS
1
tWSA
tWC
tWHA
CS2
DATA IN
D0–D3
WE
tWSCS
tWHCS
tWSD
tW
tWHD
tWR
DATA
OUTPUTS
O0–O3
tZWS
4
P4C422
AC TEST LOADS & WAVEFORMS
+5
470
Ω
D
OUT
224
Ω
15 pF
+5
470
Ω
D
OUT
224
Ω
30 pF
152
Ω
D
OUT
VTH= 1.62 V
TH
THEVENIN EQUIVALENT
Figure 1a
Figure 1b
+5
470
Ω
D
OUT
224
Ω
5 pF
3.0 V
GND
10%
90%
90%
10%
Note (5)
Note (5)
Figure 1c
Figure 1d
5
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