OPA6917
1. Material
Substrate
GaP
Epitaxial Layer GaP
(N Type)
(P/N Type)
Red LED Chip
GaP/GaP
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
Parameter
Symbol Min
V
F(1)
V
F(2)
V
R
Iv
λ
d
8
30
35
635
Typ
1.8
2.25
2.4
Max
Unit
V
V
V
mcd
nm
Condition
IF=1mA
IF=20mA
IR=10uA
IF=20mA
IF=20mA
3. Electro-Optical
Characteristics
Forward Voltage
Reverse Voltage
Brightness
Wavelength
∆λ
100
nm
IF=20mA
※
Note : Brightness is measured by Sorter E/T system with bare chip.
4. Mechanical Data
(a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
(b)
(c)
--------------------- 10mil x 10mil
--------------------- 11mil x 11mil
--------------------- 115um
--------------------- 11mil
--------------------- 6.8mil
(d)
(e)
(a)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel.
+82 63 839 1111
Fax.
+82 63 835 8259
www.auk.co.kr
Substrate
P Epi
N Epi