BFR360L3 datasheet, PDF - EEWORLD Datasheet

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BFR360L3: DescriptionNPN Silicon RF Transistor; CategoryDiscrete semiconductor The transistor; File Size103KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BFR360L3 Overview

NPN Silicon RF Transistor

BFR360L3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	CHIP CARRIER, R-XBCC-N3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	COLLECTOR
Maximum collector current (IC)	0.035 A
Collector-based maximum capacity	0.4 pF
Collector-emitter maximum voltage	6 V
Configuration	SINGLE
Minimum DC current gain (hFE)	90
highest frequency band	S BAND
JESD-30 code	R-XBCC-N3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.21 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	14000 MHz

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BFR360L3

NPN Silicon RF Transistor

Preliminary data

Low voltage/ Low current operation

For low noise amplifiers

For Oscillators up to 3.5 GHz and Pout > 10 dBm

Low noise figure: 1.0 dB at 1.8 GHz

ESD: Electrostatic discharge

sensitive device, observe handling precaution!

Type

BFR360L3

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point

106°C

Marking

Pin Configuration

1=B

2=E

3=C

Symbol

CEO

CES

CBO

EBO

tot

stg

Symbol

thJS

Value

210

150

-65 ... 150

Value

tbd

Package

TSLP-3-1

Unit

°C

is measured on the collector lead at the soldering point to the pcb

2For calculation of

please refer to Application Note Thermal Resistance

thJA

Unit

K/W

Jul-01-2003

BFR360L3 Related Products

	BFR360L3	BFR380T
Description	NPN Silicon RF Transistor	NPN Silicon RF Transistor
Is it Rohs certified?	conform to	conform to
package instruction	CHIP CARRIER, R-XBCC-N3	SC-75, 3 PIN
Contacts	3	3
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.035 A	0.08 A
Collector-based maximum capacity	0.4 pF	0.7 pF
Collector-emitter maximum voltage	6 V	6 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	90	70
highest frequency band	S BAND	S BAND
JESD-30 code	R-XBCC-N3	R-PDSO-G3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	UNSPECIFIED	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	NO LEAD	GULL WING
Terminal location	BOTTOM	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	14000 MHz	14000 MHz

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