P036QH10FG datasheet, PDF - EEWORLD Datasheet

P036QH10FG: DescriptionSilicon Controlled Rectifier, 100000mA I(T), 1000V V(DRM),; CategoryAnalog mixed-signal IC Trigger device; File Size725KB，6 Pages; ManufacturerIXYS

Download Datasheet Parametric View All

P036QH10FG Overview

Silicon Controlled Rectifier, 100000mA I(T), 1000V V(DRM),

Parameter Name	Attribute value
Maker	IXYS
package instruction	,
Reach Compliance Code	compliant
ECCN code	EAR99
Nominal circuit commutation break time	35 µs
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	100 mA
Maximum DC gate trigger voltage	3 V
Maximum leakage current	10 mA
On-state non-repetitive peak current	600 A
Maximum on-state voltage	2.2 V
Maximum on-state current	100000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-30 °C
Off-state repetitive peak voltage	1000 V
surface mount	NO
Trigger device type	SCR

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components