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SS15

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size268KB,2 Pages
ManufacturerDCCOM [ DC COMPONENTS ]
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SS15 Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC

SS15 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMA, 2 PIN
stateCONSULT MFR
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage50 V
Maximum average forward current1 A
DC COMPONENTS CO., LTD.
R
SS12
THRU
SS18
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE - 20 to 80 Volts
CURRENT - 1.0 Ampere
FEATURES
* ldeal for surface mounted applications
* Low leakage current
* Glass passivated junction
SMA ( DO-214AC )
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
*Terminals: Solder plated solderable per
MIL-STD-750, Method 2026
* Polarity: As marked
* Mounting position: Any
* Weight: 0.064 gram
.062(1.60)
.055(1.40)
.181(4.60)
.157(4.00)
.114(2.90)
.098(2.50)
.096(2.44)
.078(2.00)
.060(1.52)
.030(.76)
.208(5.28)
.188(4.80)
.008(0.203)
.002(0.051)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Derating Lead Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
NOTES : 1. Thermal Resistance (Junction to Ambient).
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
3. P.C.B Mounted with 0.2X0.2*(5.0X5.0mm
2
) copper pad area.
@T
A
= 25 C
@T
A
= 100 C
o
o
SS12
20
14
20
SS13
30
21
30
SS14
40
28
40
1.0
30
SS15
50
35
50
SS16
60
42
60
SS18
80
56
80
UNITS
Volts
Volts
Volts
Amps
Amps
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
R
θ
JA
C
J
T
J
T
STG
0.55
0.70
1.0
20
88
110
-65 to + 125
-65 to + 150
0.85
Volts
mAmps
0
C/ W
pF
0
0
C
C
308

SS15 Related Products

SS15 SS18 SS16 SS14 SS13 SS12
Description 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 80 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC
state CONSULT MFR - ACTIVE ACTIVE ACTIVE ACTIVE
Diode type Signal diode - Signal diode Signal diode Signal diode Signal diode

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