MBR4060WT-N3 datasheet, PDF - EEWORLD Datasheet

MBR4060WT-N3: Description20 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AC; Categorysemiconductor Discrete semiconductor; File Size170KB，7 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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MBR4060WT-N3 Overview

20 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AC

Parameter Name	Attribute value
Number of terminals	3
Number of components	2
Processing package description	LEAD FREE, PLASTIC PACKAGE-3
Lead-free	Yes
EU RoHS regulations	Yes
state	TRANSFERRED
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	MATTE Tin OVER Nickel
Terminal location	single
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	COMMON CATHODE, 2 ELEMENTS
Shell connection	CATHODE
Diode component materials	silicon
Diode type	rectifier diode
application	GENERAL PURPOSE
Phase	1
Maximum repetitive peak reverse voltage	60 V
Maximum average forward current	20 A
Maximum non-repetitive peak forward current	265 A

	MBR4060WT-N3	MBR4060WTPBF_12
Description	20 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AC	20 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AC
Number of terminals	3	3
Number of components	2	2
Processing package description	LEAD FREE, PLASTIC PACKAGE-3	LEAD FREE, PLASTIC PACKAGE-3
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
state	TRANSFERRED	TRANSFERRED
packaging shape	Rectangle	Rectangle
Package Size	Flange mounting	Flange mounting
Terminal form	THROUGH-hole	THROUGH-hole
terminal coating	MATTE Tin OVER Nickel	MATTE Tin OVER Nickel
Terminal location	single	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy
Craftsmanship	SCHOTTKY	SCHOTTKY
structure	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Shell connection	CATHODE	CATHODE
Diode component materials	silicon	silicon
Diode type	rectifier diode	rectifier diode
application	GENERAL PURPOSE	GENERAL PURPOSE
Phase	1	1
Maximum repetitive peak reverse voltage	60 V	60 V
Maximum average forward current	20 A	20 A
Maximum non-repetitive peak forward current	265 A	265 A

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