LTO-DMS
MBR4040 thru MBR4060
40 Amp HT Power Schottky Barrier Rectifier
40 Volts to 60 Volts
Features
* High Junction Temperature Capability
* Low Leakage Current and Low Forward Voltage Drop
* Low Power Loss and High Efficiency
Maximum Ratings
* Operating Junction Temperature: 150°C
* Storage Temperature: - 55 °C to +175°C
* Per diode Thermal Resistance 2.2°C/W Junction to Case
Mechanical Data
* Case: Molded Plastic
* Terminals: Plated Lead Solderable per
MIL-STD-202, Method 208
* Marking:Type Number
* Weight: 6 grams (approx)
LTO-DMS Semiconductor Corporation
1468, 86th Street, Brooklyn
New York, 11228, USA
Tel: (718) 234 6010 / (707) 3223 4679
Fax:(718) 234 6013 / (707) 3223 6696
TO-3P
Millimeter
Dim
Min..
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
4.70
2.79
1.50
1.00
2.00
3.00
0.400
21.8
15.9
5.45
20.2
4.00
3.00
6.80
4.44
1.72
Max
5.30
3.18
2.50
1.40
2.40
3.40
0.800
22.4
16.5
----
20.6
4.60
3.40
7.62
5.30
2.03
Min.
0.185
0.110
0.059
0.040
0.079
0.118
0.016
0.860
0.627
0.215
0.795
0.157
0.118
0.268
0.175
0.068
Max.
0.209
0.125
0.098
0.055
0.094
0.133
0.031
0.883
0.650
----
0.810
0.180
0.133
0.300
0.210
0.080
Inches
Symbol
Characteristics
MBR4040
MBR4045
MBR4060
Unit
V
RRM
V
RM
V
R(RMS)
V
F
I
F(AV)
I
FSM
dv/dt
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Forward Voltage Drop Per Element
I
F
=40A @T
J
=25°C
Average Forward Current
8.3ms Single Half-Sine-Wave
Superimposed On Rated Load
Voltage Rate Of Change (Rated V
R
)
Maximum DC Reverse Current
At Rated DC Blocking Voltage
T
J
=25°C
T
J
=125°C
40
40
28
0.70
45
45
31.5
60
60
42
0.80
V
V
V
V
A
A
V/us
mA
°C/ W
pF
°C
°C
40
300
10000
0.2
40
2.0
400
-55to+150
-55to+175
I
R
R
thJC
C
J
T
J
T
STG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Revision: 1
2002/06/17
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