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BUP52

Description
Bipolar Transistors;NPN;70A;200V;TO-3
CategoryDiscrete semiconductor   
File Size204KB,2 Pages
ManufacturerInchange Semiconductor
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BUP52 Overview

Bipolar Transistors;NPN;70A;200V;TO-3

isc Silicon NPN Power Transistor
BUP52
DESCRIPTION
·High
DC Current Gain-
: h
FE
>20@I
C
= 20A
·Low
Collector-Emitter Saturation Voltage
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Ideally
suited for Motor Control, Switching and Linear
Applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Peak collector current
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
250
200
10
70
90
300
-55~200
-55~200
UNIT
V
V
V
A
A
W
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
0.58
UNIT
℃/W
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www.iscsemi.com
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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