ILD615, ILQ615
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual, Quad Channel)
FEATURES
• Identical channel to channel footprint
Dual Channel
A
1
C
2
A
3
C
4
8
C
7
E
6
C
5
E
• Dual and quad packages feature:
- Reduced board space
- Lower pin and parts count
- Better channel to channel CTR match
- Improved common mode rejection
• Isolation test voltage from double molded
package, 5300 V
RMS
Quad Channel
A
1
C
2
A
C
3
4
5
6
7
16
C
15
E
14
C
13
E
12
C
11
E
10
C
9
E
V
D E
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
• CSA 93751
• BSI IEC 60950; IEC 60065
• DIN EN 60747-5-2 (VDE0884)/DIN EN 60747-5-5 pending,
available with option 1
i179012-1
A
C
A
C
8
i179052-2
DESCRIPTION
The ILD615, ILQ615 are multi-channel phototransistor
optocouplers that use GaAs IRLED emitters and high gain
NPN phototransistors. These devices are constructed using
over/under leadframe optical coupling and double molded
insulation technology resulting a withstand test voltage of
7500 VAC
PEAK
and a working voltage of 1700 V
RMS
.
The binned min./max. and linear CTR characteristics make
these devices well suited for DC or AC voltage detection.
Eliminating the phototransistor base connection provides
added electrical noise immunity from the transients found in
many industrial control environments.
Because of guaranteed maximum non-saturated and
saturated switching characteristics, the ILD615, ILQ615 can
be used in medium speed data I/O and control systems. The
binned min./max. CTR specification allow easy worst case
interface calculations for both level detection and switching
applications. Interfacing with a CMOS logic is enhanced by
the guaranteed CTR at I
F
= 1 mA.
Document Number: 83652
Rev. 1.6, 04-Mar-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
1
ILD615, ILQ615
Vishay Semiconductors
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
ORDERING INFORMATION
DIP
I
L
x
6
1
5
-
#
CTR
BIN
X
0
#
#
T
TAPE
AND
REEL
Option 6
PART NUMBER
x = D (Dual) or Q (Quad)
PACKAGE OPTION
7.62 mm
Option 7
10.16 mm
Option 9
> 0.7 mm
> 0.1 mm
DUAL CHANNEL
AGENCY
CERTIFIED/PACKAGE
UL, CSA, BSI, VDE
DIP-8
DIP-8, 400 mil, option 6
SMD-8, option 7
SMD-8, option 9
DIP-16
SMD-16, option 7
SMD-16, option 9
VDE
DIP-8
DIP-8, 400 mil, option 6
SMD-8, option 7
DIP-16
DIP-16, 400 mil, option 6
SMD-16, option 7
40 to 80
ILD615-1
-
ILD615-1X007T
ILD615-1X009
-
-
-
40 to 80
-
-
-
-
-
-
63 to 125
ILD615-2
-
-
ILD615-2X009T
(1)
-
-
-
63 to 125
ILD615-2X001
-
-
-
-
100 to 200
ILD615-3
-
-
ILD615-3X009T
-
-
-
100 to 200
-
ILD615-3X017T
(1)
-
-
-
CTR (%)
10 mA
160 to 320
ILD615-4
ILD615-4X006
-
ILD615-4X009T
(1)
-
-
-
160 to 320
ILD615-4X001
-
-
-
-
40 to 80
-
-
-
-
ILQ615-1
-
ILQ615-1X009
40 to 80
-
-
-
-
-
-
QUAD CHANNEL
63 to 125
-
-
-
-
ILQ615-2
-
63 to 125
-
-
-
-
-
ILQ615-2X017
100 to 200
-
-
-
-
ILQ615-3
160 to 320
-
-
-
-
ILQ615-4
ILQ615-2X007 ILQ615-3X007T
(1)
ILQ615-4X007
ILQ615-3X009T
(1)
ILQ615-4X009T
(1)
100 to 200
-
-
-
ILQ615-3X016
-
160 to 320
-
-
-
-
-
ILD615-2X016 ILD615-3X016 ILD615-4X016
ILQ615-3X001 ILQ615-4X001
Notes
• Also available in tubes; do not add T to end.
• Additional options may be possible, please contact sales office.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector current
Power dissipation
Derate linearly from 25 °C
t < 1 ms
BV
CEO
BV
ECO
I
C
I
C
P
diss
70
7
50
100
150
2
V
V
mA
mA
mW
mW/°C
V
R
I
F
I
FSM
P
diss
6
60
1.5
100
1.33
V
mA
A
mW
mW/°C
TEST CONDITION
SYMBOL
VALUE
UNIT
www.vishay.com
2
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83652
Rev. 1.6, 04-Mar-11
ILD615, ILQ615
Optocoupler, Phototransistor Output
Vishay Semiconductors
(Dual, Quad Channel)
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
COUPLER
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
(1)
TEST CONDITION
SYMBOL
T
stg
T
amb
T
j
VALUE
- 55 to + 150
- 55 to + 100
100
260
400
5.33
500
6.67
UNIT
°C
°C
°C
°C
mW
mW/°C
mW
mW/°C
V
RMS
V
P
mW
mm
mm
2 mm distance from case bottom
T
sld
Package power dissipation ILD615
Derate linearly from 25 °C
Package power dissipation ILQ615
Derate linearly from 25 °C
Isolation test voltage
Isolation voltage
Total power dissipation
Creepage distance
Clearance distance
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
t=1s
V
ISO
V
IORM
P
tot
5300
890
250
7
7
10
12
10
11
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTCS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
Collector emitter leakage current, -1, -2
Collector emitter leakage current, -3, -4
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Thermal resistance, junction to lead
PACKAGE TRANSFER CHARACTERISTICS
Channel/channel CTR match
COUPLER
Capacitance (input to output)
Insulation resistance
Channel to channel isolation
V
IO
= 0 V, f = 1 MHz
V
IO
= 500 V, T
A
= 25 °C
C
IO
R
S
10
12
500
0.8
10
14
pF
VAC
I
F
= 10 mA, V
CE
= 5 V
CTRX/CTRY
1 to 1
2 to 1
V
CE
= 5 V, f = 1 MHz
V
CE
= 10 V
V
CE
= 10 V
I
CE
= 0.5 mA
I
E
= 0.1 mA
C
CE
I
CEO
I
CEO
BV
CEO
BV
ECO
R
THJL
70
7
500
6.8
2
5
50
100
pF
nA
nA
V
V
K/W
I
F
= 10 mA
I
R
= 10 μA
V
R
= 6 V
V
R
= 0 V, f = 1 MHz
V
F
V
BR
I
R
C
O
R
THJL
1
6
1.15
30
0.01
25
750
10
1.3
V
V
μA
pF
K/W
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
• Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Document Number: 83652
Rev. 1.6, 04-Mar-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
3
ILD615, ILQ615
Vishay Semiconductors
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
ILD615-1
ILQ615-1
ILD615-2
Current transfer ratio
(collector emitter saturated)
I
F
= 10 mA, V
CE
= 0.4 V
ILQ615-2
ILD615-3
ILQ615-3
ILD615-4
ILQ615-4
ILD615-1
ILQ615-1
ILD615-2
I
F
= 1 mA, V
CE
= 5 V
ILQ615-2
ILD615-3
ILQ615-3
ILD615-4
Current transfer ratio
(collector emitter)
ILQ615-4
ILD615-1
ILQ615-1
ILD615-2
I
F
= 10 mA, V
CE
= 5 V
ILQ615-2
ILD615-3
ILQ615-3
ILD615-4
ILQ615-4
SYMBOL
CTR
CEsat
CTR
CEsat
CTR
CEsat
CTR
CEsat
CTR
CE
CTR
CE
CTR
CE
CTR
CE
CTR
CE
CTR
CE
CTR
CE
CTR
CE
13
22
34
56
40
63
100
160
MIN.
TYP.
25
40
60
100
30
45
70
90
60
80
150
200
80
125
200
320
MAX.
UNIT
%
%
%
%
%
%
%
%
%
%
%
%
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
TEST CONDITION
100 %, t
test
= 1 s
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IO
= 500 V
Insulation resistance
V
IO
= 500 V, T
amb
= 100 °C
V
IO
= 500 V, T
amb
½
175 °C
(construction test only)
SYMBOL
V
pd
V
IOTM
V
pd
R
IO
R
IO
R
IO
I
SI
P
SO
V
IOTM
T
SI
MIN.
1.669
10
1.424
10
12
10
11
10
9
275
400
10
175
TYP.
MAX.
UNIT
kV
kV
kV
mA
mW
kV
°C
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
Note
• According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
www.vishay.com
4
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83652
Rev. 1.6, 04-Mar-11
ILD615, ILQ615
Optocoupler, Phototransistor Output
Vishay Semiconductors
(Dual, Quad Channel)
450
400
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
IR-Diode
I
SI
(mA)
Phototransistor
P
SO
(mW)
V
IOTM
t
1
, t
2
t
3
, t
4
t
test
t
stres
V
Pd
V
IOWM
V
IORM
= 1 to 10 s
=1s
= 10 s
= 12 s
0
13930
t
3
t
test
t
4
t
1
t
Tr
= 60 s
t
2
t
stres
t
T
amb
- Ambient Temperature (°C)
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-2 (VDE0884); IEC60747-5-5
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
NON-SATURATED
Current
Turn-on time
Rise time
Turn-off time
Fall time
Propagation H to L
Propagation L to H
SATURATED
ILD615-1
ILQ615-1
ILD615-2
Current
V
CC
= 5 V, R
L
= 1 k,
V
TH
= 1.5 V
ILQ615-2
ILD615-3
ILQ615-3
ILD615-4
ILQ615-4
ILD615-1
ILQ615-1
ILD615-2
Turn-on time
V
CC
= 5 V, R
L
= 1 k,
V
TH
= 1.5 V
ILQ615-2
ILD615-3
ILQ615-3
ILD615-4
ILQ615-4
I
F
I
F
I
F
I
F
t
on
t
on
t
on
t
on
20
10
10
5
3
4.3
4.3
6
mA
mA
mA
mA
μs
μs
μs
μs
V
CC
= 5 V, R
L
= 75
,
50 % of V
PP
V
CC
= 5 V, R
L
= 75
,
50 % of V
PP
V
CC
= 5 V, R
L
= 75
,
50 % of V
PP
V
CC
= 5 V, R
L
= 75
,
50 % of V
PP
V
CC
= 5 V, R
L
= 75
,
50 % of V
PP
V
CC
= 5 V, R
L
= 75
,
50 % of V
PP
V
CC
= 5 V, R
L
= 75
,
50 % of V
PP
I
F
t
on
t
r
t
off
t
f
t
PHL
t
PLH
10
3
2
2.3
2
1.1
2.5
mA
μs
μs
μs
μs
μs
μs
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Document Number: 83652
Rev. 1.6, 04-Mar-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
5
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