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FR306(G)

Description
Fast recovery diode, 3.0A, 800V, 200A, 1.3V, 3.0A, 10.0μA, 500nS
CategoryDiscrete semiconductor    Fast recovery diode   
File Size676KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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FR306(G) Overview

Fast recovery diode, 3.0A, 800V, 200A, 1.3V, 3.0A, 10.0μA, 500nS

FR306(G) Parametric

Parameter NameAttribute value
Case StyleDO-27
IVA(A)3.0
VRRM (V)800
IFSM (A)200
VF (V)1.3
@IVA(A)3.0
Maximum reverse current10.0
TRR(nS)500
classDiodes
FR301G-FR307G
3.0 AMP. Glass Passivated Fast Recovery Rectifiers
DO-201AD
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260
o
C /10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Mounting position: Any
Weight: 1.2 grams
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
o
@T
A
= 55 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 3.0A
o
Maximum DC Reverse Current @ T
A
=25 C
o
at Rated DC Blocking Voltage @ T
A
=125 C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance
Operating Temperature Range
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
FR
FR
FR
FR
FR
FR
FR
Units
301G 302G 303G 304G 305G 306G 307G
50
100
200
400
600
800 1000
V
35
70
140
280
420
560
700
V
50
100
200
400
600
800 1000
V
3.0
A
125
1.3
5.0
100
150
250
30
35
-65 to +150
-65 to +150
500
A
V
uA
uA
nS
pF
o
C/W
o
C
o
C
Storage Temperature Range
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
Revision:20170301-P1
ht
t
p
:
//
www.lgesemi
.c
o
m
mail:lge@lgesemi.com

FR306(G) Related Products

FR306(G) RNC60H2640BPRE6201 RNC60H2641BS RNC60H2641DPR36201 FR301(G) FR302(G) FR303(G)
Description Fast recovery diode, 3.0A, 800V, 200A, 1.3V, 3.0A, 10.0μA, 500nS Fixed Resistor, Metal Film, 0.125W, 264ohm, 250V, 0.1% +/-Tol, 50ppm/Cel, Through Hole Mount, AXIAL LEADED RESISTOR, METAL FILM, 0.125 W, 0.1 %, 50 ppm, 2640 ohm, THROUGH HOLE MOUNT, AXIAL LEADED Fixed Resistor, Metal Film, 0.125W, 2640ohm, 250V, 0.5% +/-Tol, 50ppm/Cel, Through Hole Mount, AXIAL LEADED Fast recovery diode, 3.0A, 50V, 200A, 1.3V, 3.0A, 10.0μA, 150nS Fast recovery diode, 3.0A, 100V, 200A, 1.3V, 3.0A, 10.0μA, 150nS Fast recovery diode, 3.0A, 200V, 200A, 1.3V, 3.0A, 10.0μA, 150nS
Case Style DO-27 - - - DO-27 DO-27 DO-27
IVA(A) 3.0 - - - 3.0 3.0 3.0
VRRM (V) 800 - - - 50 100 200
IFSM (A) 200 - - - 200 200 200
VF (V) 1.3 - - - 1.3 1.3 1.3
@IVA(A) 3.0 - - - 3.0 3.0 3.0
TRR(nS) 500 - - - 150 150 150
class Diodes - - - Diodes Diodes Diodes

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