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EM515

Description
1 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size333KB,2 Pages
ManufacturerOlitech Electronics
Websitehttp://olitech-elec.com/En_index.asp
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EM515 Overview

1 A, SILICON, SIGNAL DIODE

Email: info@olitech-elec.com
Website: www.olitech-elec.com
GENERAL PURPOSE SILICON RECTIFIER
Forward Current -
1.0 Ampere
EM513 THRU EM520
Reverse Voltage -
1600 to 2000 Volts
DO-41
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160(4.2)
MECHANICAL DATA
1.0 (25.4)
MIN.
0.034 (0.9)
0.028 (0.7)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight
:0.26 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
EM513
EM516
EM520
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
1600
1120
1600
1800
1260
1800
1.0
2000
1400
2000
I
FSM
V
F
I
R
C
J
R
q
JA
T
J
,
T
STG
30.0
1.1
5.0
50.0
15.0
50.0
-65 to +175
Amps
Volts
uA
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
OLITECH ELECTRONICS CO. LTD.
Page:P2-P1

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EM515 EM513 EM516 EM518 EM514 EM517 EM520 EM519
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