IC63LV1024
Document Title
128K x 8 Hight Speed SRAM with 3.3V Central Power
Revision History
Revision No
0A
0B
0C
0D
History
Initial Draft
Add B (36-pin TF-BGA 6x8mm)
and H (32-pin TSOP-1 8x13.4mm)
package type
To correct the TYPO error
Obsolete "H" type
Draft Date
Remark
September 12,2001
June 20,2002
October 16,2003
April 16,2004
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
AHSR025-0D
04/16/2004
1
IC63LV1024
128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT
FEATURES
• High-speed access times:
8, 10, 12 and 15 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with
CE
and
OE
options
•
CE
power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 32-pin 300mil SOJ
– 32-pin 400mil SOJ
– 32-pin 400mil TSOP-2
– 36-pin TF-BGA (6mmx8mm)
DESCRIPTION
The
ICSI
IC63LV1024 is a very high-speed, low power, 131,
072-word by 8-bit CMOS static RAM in revolutionary pinout.
The IC63LV1024 is fabricated using
ICSI
's high-perform-
ance CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields higher
performance and low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
The IS63LV1024 operates from a single 3.3V power supply
and all inputs are TTL-compatible.
The IS63LV1024 is available in 32-pin 300mil SOJ, 400mil
SOJ, 400mil TSOP-2 and 36-pin TF-BGA (6mmx8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K X 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2
Integrated Circuit Solution Inc.
AHSR025-0D
04/16/2004
IC63LV1024
PIN DESCRIPTIONS
A0-A16
CE
OE
WE
I/O1-I/O8
Vcc
GND
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
Bidirectional Ports
Power
Ground
TRUTH TABLE
Mode
WE
X
H
H
L
CE
H
L
L
L
OE
X
H
L
X
I/O Operation Vcc Current
High-Z
High-Z
D
OUT
D
IN
I
SB
1
, I
SB
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
Not Selected
(Power-down)
Output Disabled
Read
Write
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
–0.5 to Vcc + 0.5
–55 to +125
–65 to +150
1.0
Unit
V
°C
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
4
Integrated Circuit Solution Inc.
AHSR025-0D
04/16/2004
IC63LV1024
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
3.3V
±
0.3V
3.3V
±
0.3V
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
, Outputs Disabled
Com.
Ind.
Com.
Ind.
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2.2
–0.3
–2
–5
–2
–5
Max.
—
0.4
V
CC
+ 0.3
0.8
2
5
2
5
Unit
V
V
V
V
µA
µA
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
2. The Vcc operating range for 8 ns is 3.3V +10%, -5%.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
1
I
SB
1
Vcc Operating
Supply Current
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
(CMOS Inputs)
Test Conditions
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
V
CC
= Max.,
CE
≤
V
CC
– 0.2V,
V
IN
≥
V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
Com.
Ind.
Com.
Ind.
-8 ns
Min.
Max.
—
—
—
—
—
—
160
170
30
40
10
15
-10 ns
Min.
Max.
—
—
—
—
—
—
150
160
30
40
10
15
-12 ns
Min.
Max.
—
—
—
—
—
—
140
150
30
40
10
15
-15 ns
Min.
Max. Unit
—
—
—
—
—
—
130
140
30
40
10
15
mA
mA
I
SB
2
mA
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE
(1,2)
Symbol
C
IN
C
I/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 3.3V.
Integrated Circuit Solution Inc.
AHSR025-0D
04/16/2004
5
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