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CAT28LV256N-30

Description
EEPROM, 32KX8, 300ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
Categorystorage    storage   
File Size66KB,12 Pages
ManufacturerCatalyst
Websitehttp://www.catalyst-semiconductor.com/
Download Datasheet Parametric View All

CAT28LV256N-30 Overview

EEPROM, 32KX8, 300ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32

CAT28LV256N-30 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCatalyst
Parts packaging codeQFJ
package instructionQCCJ, LDCC32,.5X.6
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time300 ns
command user interfaceNO
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
JESD-609 codee0
length13.97 mm
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals32
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
page size64 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height3.55 mm
Maximum standby current0.00015 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
switch bitYES
width11.43 mm
Maximum write cycle time (tWC)10 ms

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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