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STD2N50

Description
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size159KB,10 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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STD2N50 Overview

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD2N50
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STD2N50
s
s
s
s
s
V
DSS
500 V
R
DS( on)
< 5.5
I
D
2A
s
s
TYPICAL R
DS(on)
= 4.5
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
3
1
IPAK
TO-251
(Suffix ”-1”)
2
1
DPAK
TO-252
3
(Suffix ”T4”)
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(•)
P
tot
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
o
Value
500
500
±
20
2
1.25
8
45
0.36
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
o
o
C
C
(•) Pulse width limited by safe operating area
December 1996
1/10
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