MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR08AS-8
OUTLINE DRAWING
Dimensions
in mm
4.4±0.1
1.6±0.2
1.5±0.1
2.5±0.1
1
2
3
0.8 MIN
0.5±0.07
0.4±0.07
1.5±0.1 1.5±0.1
(Back side)
2
1
T
1
TERMINAL
2
T
2
TERMINAL
3
GATE TERMINAL
0.4
+0.03
–0.05
•
•
•
•
I
T (RMS)
..................................................................... 0.8A
V
DRM
....................................................................... 400V
I
FGT
!
, I
RGT
!
, I
RGT
#
............................................. 5mA
I
FGT
#
..................................................................... 10mA
3
1
SOT-89
APPLICATION
Hybrid IC, solid state relay,
control of household equipment such as electric fan · washing machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8 (marked “B•”)
400
500
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction,
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
T
a
=40°C
V4
3.9±0.3
Ratings
0.8
8
0.26
1
0.1
6
1
–40 ~ +125
–40 ~ +125
48
Unit
A
A
A
2
s
W
W
V
A
°C
°C
mg
V1.
Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
V
FGT
#
I
FGT
!
I
RGT
!
I
RGT
#
I
FGT
#
V
GD
R
th (j-a)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Gate trigger current
V2
Gate trigger voltage
V2
Parameter
Repetitive peak off-state current
On-state voltage
!
@
#
$
!
@
#
$
T
j
=125°C, V
D
=1/2V
DRM
Junction to
case
V4
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=1.2A, Instantaneous measurement
Limits
Min.
—
—
—
—
—
—
—
—
—
—
0.1
—
V3
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
2.0
2.0
2.0
2.0
2.0
5
5
5
10
—
65
—
Unit
mA
V
V
V
V
V
mA
mA
mA
mA
V
°C/
W
V/µs
V2.
Measurement using the gate trigger characteristics measurement circuit.
V3.
The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4.
Mounted on 25mm
×
25mm
×
t0.7mm ceramic plate with solder.
Voltage
class
V
DRM
(V)
(dv/dt)
c
Min.
Unit
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
T
j
=125°C
8
400
2
V/µs
2. Rate of decay of on-state commutating current
(di/dt)
c
=–0.4A/ms
3. Peak off-state voltage
V
D
=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT
10
ON-STATE CURRENT (A)
10
1
7
5
4
3
2
T
j
= 125°C
10
0
7
5
4
3
2
10
–1
0
1
2
8
6
4
T
j
= 25°C
2
0
10
0
3
4
5
2 3 4 5 7 10
1
2 3 4 5 7 10
2
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
GATE VOLTAGE (V)
10
1
7
5
3
2
P
G(AV)
= 0.1W
V
GT
P
GM
= 1W
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
2
7
5
3
2
V
GM
= 10V
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
I
FGT III
I
FGT I
I
RGT III
I
RGT I
10
0
7
5
3
2
I
GM
= 1A
I
FGT I
,
I
RGT I
, I
RGT III
I
FGT III
V
GD
= 0.2V
10
–1
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
GATE CURRENT (mA)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
2
2 3 5 7 10
3
2 3 5 7 10
4
2 3 5 7 10
5
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
JUNCTION TO AMBIENT
100 (%)
V
FGT I
V
FGT III
JUNCTION TO CASE
V
RGT I
V
RGT III
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CURVES APPLY REGARDLESS
140 OF CONDUCTION ANGLE
NATURAL CONVECTION
RESISTIVE,
120
INDUCTIVE
100
LOADS
80
60
40
20
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS ON-STATE CURRENT (A)
160
ON-STATE POWER DISSIPATION (W)
2.0
1.6
1.2
0.8
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
0.4
0
0
0.4
0.8
1.2
1.6
2.0
RMS ON-STATE CURRENT (A)
CASE TEMPERATURE (°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7 TYPICAL EXAMPLE
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
10
–1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
DISTRIBUTION
HOLDING CURRENT (mA)
TYPICAL EXAMPLE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10
2
7
5
3
2
10
1
7
5
3
2
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
+
T
2
, G
+
TYPICAL
–
T
2
, G
–
½
–
+
EXAMPLE
T
2
, G
10
–1
0
40
–40
10
0
7
5
3
2
80
120
160
JUNCTION TEMPERATURE (°C)
100 (%)
160
140
TYPICAL EXAMPLE
T
j
= 125°C
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
120
100
80
60
40
20
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
III QUADRANT
I QUADRANT
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
DISTRIBUTION
LACHING CURRENT (mA)
+
T
2
, G
–
TYPICAL EXAMPLE
COMMUTATION CHARACTERISTICS
10
2
VOLTAGE WAVEFORM
7
TYPICAL
t
5
EXAMPLE
V
D
3 (dv/dt)
C
T
j
= 125°C
2
CURRENT WAVEFORM
I
T
= 1A
(di/dt)
C
τ
= 500µs
10
1
I
T
τ
7
V
D
= 200V
t
5
f = 3Hz
3
2
III QUADRANT
10
0
7 MINIMUM
5
CHARAC-
I QUADRANT
3
TERISTICS
2
VALUE
10
–1
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6Ω
6Ω
100 (%)
TYPICAL EXAMPLE
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
6V
V
A
R
G
6V
V
A
R
G
10
2
7
I
RGT I
I
RGT III
I
FGT I
5
I
FGT III
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6Ω
6V
V
A
R
G
6V
V
A
R
G
GATE CURRENT PULSE WIDTH (µs)
TEST PROCEDURE
3
TEST PROCEDURE
4
Feb.1999
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