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AT28C64B-20TL

Description
EEPROM, 8KX8, 200ns, Parallel, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, MO-183, TSOP1-28
Categorystorage    storage   
File Size299KB,19 Pages
ManufacturerAtmel (Microchip)
Environmental Compliance
Download Datasheet Parametric View All

AT28C64B-20TL Overview

EEPROM, 8KX8, 200ns, Parallel, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, MO-183, TSOP1-28

AT28C64B-20TL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAtmel (Microchip)
Parts packaging codeTSOP1
package instructionTSOP1,
Contacts28
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time200 ns
Other features100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE
Data retention time - minimum10
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G28
JESD-609 codee3
length11.8 mm
memory density65536 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.55 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width8 mm
Maximum write cycle time (tWC)10 ms
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