MCM511002P85 datasheet, PDF - EEWORLD Datasheet

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MCM511002P85: DescriptionIC,DRAM,STATIC COL,1MX1,CMOS,DIP,18PIN,PLASTIC; Categorystorage storage; File Size950KB，15 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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MCM511002P85 Overview

IC,DRAM,STATIC COL,1MX1,CMOS,DIP,18PIN,PLASTIC

MCM511002P85 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NXP
package instruction	DIP, DIP18,.3
Reach Compliance Code	unknown
Maximum access time	85 ns
I/O type	SEPARATE
JESD-30 code	R-PDIP-T18
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	STATIC COLUMN DRAM
memory width	1
Number of terminals	18
word count	1048576 words
character code	1000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
power supply	5 V
Certification status	Not Qualified
refresh cycle	512
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

MCM511002P85 Related Products

	MCM511002P85	MCM511002P12	MCM511002J12	MCM511002AJ10R2	MCM511002AJ80R2
Description	IC,DRAM,STATIC COL,1MX1,CMOS,DIP,18PIN,PLASTIC	IC,DRAM,STATIC COL,1MX1,CMOS,DIP,18PIN,PLASTIC	IC,DRAM,STATIC COL,1MX1,CMOS,SOJ,20PIN,PLASTIC	IC,DRAM,STATIC COL,1MX1,CMOS,SOJ,20PIN,PLASTIC	IC,DRAM,STATIC COL,1MX1,CMOS,SOJ,20PIN,PLASTIC
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	NXP	NXP	NXP	NXP	NXP
package instruction	DIP, DIP18,.3	DIP, DIP18,.3	SOJ, SOJ20/26,.34	SOJ, SOJ20/26,.34	SOJ, SOJ20/26,.34
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum access time	85 ns	120 ns	120 ns	100 ns	80 ns
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-PDIP-T18	R-PDIP-T18	R-PDSO-J20	R-PDSO-J20	R-PDSO-J20
JESD-609 code	e0	e0	e0	e0	e0
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	STATIC COLUMN DRAM	STATIC COLUMN DRAM	STATIC COLUMN DRAM	STATIC COLUMN DRAM	STATIC COLUMN DRAM
memory width	1	1	1	1	1
Number of terminals	18	18	20	20	20
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C
organize	1MX1	1MX1	1MX1	1MX1	1MX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	SOJ	SOJ	SOJ
Encapsulate equivalent code	DIP18,.3	DIP18,.3	SOJ20/26,.34	SOJ20/26,.34	SOJ20/26,.34
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
power supply	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	512	512	512	512	512
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	J BEND	J BEND	J BEND
Terminal pitch	2.54 mm	2.54 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL

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