KTD1146 datasheet, PDF - EEWORLD Datasheet

KTD1146: Description40V 5A 625mW TO-92 Bipolar Transistor; CategoryDiscrete semiconductor; File Size17KB，1 Pages; ManufacturerShanghai Jiaxing Electronics Co.,Ltd.

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KTD1146 Overview

40V 5A 625mW TO-92 Bipolar Transistor

Features

Product Name: 40V 5A 625mW TO-92 Bipolar Transistor

Product model: KTD1146

Features:

Technical Parameters:

POLARITY:NPN

PIN ARRAY Pin: ECB

Pcm power: 625mW

Ic current: 5000mA

BVCBO collector breakdown voltage: 40V

BVCBO collector breakdown voltage: 20V

BVEBO emitter reverse breakdown voltage: 7V

hFE magnification MIN: 120

hFE amplification factor MAX: 700 (Vce=2V, Ic=500mA)

VCE(sat) saturation voltage drop: 0.4V (Ic=3000mA, Ib=60mA)

Ft characteristic frequency: 20MHz

Package: TO-92

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