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MB258

Description
HIGH CURRENT SINGLE-PHASE SILICON BRIDGE RECTIFIER high current single-phase silicon bridge rectifier
CategoryDiscrete semiconductor   
File Size315KB,2 Pages
ManufacturerHORNBY
Websitehttp://www.hornby.com.cn/
Nantong Kangbi Electronics Co., Ltd. specializes in manufacturing power devices such as rectifier diodes, surface mounted diodes, silicon bridge rectifiers, MOS tubes, etc. After more than 20 years of development, the annual production of semiconductor device finished parts has reached 6 billion pieces. It has now become a semiconductor device supplier integrating R&D, production and service, providing semiconductor parts and related services to customers all over the world. The company has passed ISO9001, ISO14001, TS16949, OHSAS18001, UL and other international certifications. At the same time, it has also been recognized by many well-known international and domestic companies, such as Haier, Huawei, Foxconn, Omron, AOC, Skyworth, Samsung, Huntkey, AGASTYA, YUKITA, MERITEK, SUNPOWER, etc. The products are widely used in various consumer electronics, communication electronics, home appliances, energy-saving lighting, automotive electronics, wind energy, solar photovoltaic and other industries. The new generation of energy-saving and ultra-low power consumption devices have been widely used in the partners' 6-level energy-efficient power supply products; SMD patch products use automated equipment and appearance inspection systems to ensure product quality; the company has the core chip R&D and production capabilities and can customize products according to customer needs.
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MB258 Overview

HIGH CURRENT SINGLE-PHASE SILICON BRIDGE RECTIFIER high current single-phase silicon bridge rectifier

Features

Product Name: HIGH CURRENT SINGLE-PHASE SILICON BRIDGE RECTIFIER


Product model: MB258


Product Description:


· Electrically Isolated Metal Case for


Maximum Heat Dissipation


· Surge Overload Ratings to 300 Amperes


· Rating to 1,000V PRV.


· High efficiency


· UL Recognized File # E-216967



parameter:


Vrrm (reverse repetitive peak voltage): 800V


I (AV) (average forward rectified current): 25A


(Forward surge current): 300A


IF (average forward current): 12.5A


VF (forward voltage): 1.1V


IR (reverse DC current): 10?A TA=25 C


500??A TA=125 C


Package:KBPC-MP

MB258 Preview

Download Datasheet
KBPC25005(W) THRU KBPC2510(W)
HIGH CURRENT SINGLE-PHASE SILICON BRIDGE RECTIFIER
REVERSE VOLTAGE:
50 to 1000 VOLTS
FORWARD CURRENT:
25.0 AMPERE
FEATURES
· Electrically Isolated Metal Case for
Maximum Heat Dissipation
· Surge Overload Ratings to 300 Amperes
· Rating to 1,000V PRV.
· High efficiency
· UL Recognized File # E-216967
KBPC(W)
MECHANICAL DATA
Case: Metal or molded plastic with heatsink integrally
mounted in the bridge encapsulation
Suffix letter "P" added to indicate plastic
Terminals: Either plated 0.25" (6.35mm) Fasten lugs or
plated copper leads 0.040" (1.02mm) diameter.
Suffix letter "W" added to indicate leads
Mounting position: Any
Weight: 1.0ounce, 30.0gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60H
Z
, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
KBPC25005 KBPC2501 KBPC2502 KBPC2504 KBPC2506 KBPC2508 KBPC2510
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current at T
C
=55℃
Peak Forward Surge Current,
8.3ms single half-sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage
at 12.5A DC and 25℃
Maximum Reverse Current
at Rated DC Blocking Voltage
at T
A
=25℃
T
A
=125℃
I
R
C
J
R
θJC
T
J
,Tstg
V
F
I
FSM
V
RRM
V
RMS
V
DC
I
(AV)
Units
Volts
Volts
Volts
Amp
50
35
50
100
70
100
200
140
200
400
280
400
25.0
600
420
600
800
560
800
1000
700
1000
300
Amp
1.1
10.0
1000
300
1.9
-55 to +150
Volts
uAmp
pF
℃/W
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
NOTES:
1- Measured at 1 MH
Z
and applied reverse voltage of 4.0 VDC.
2- Thermal resistance from junction to case per leg
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